Yin's research achievement

129.	M. Miuchi, and Y. Yin “Single-layer, multi-layer and superlattice chalcogenides for non-volatile memory and artificial intelligence device” Electron. Signal Process., 1, 000x 1-18 (2025).
128.	M. Miuchi, K. Matsuda, S. Yoshimoto, E. Sawai, and Y. Yin “O-doped GeTe/Sb₂Te₃ multilayer chalcogenide for multi-level phase-change device” Jpn. J. Appl. Phys., 64, 04SP29 1-6 (2025).
127.	S. Yahagi, and Y. Yin “N-Doped GeTe for Phase-Change Device with High Reliability” Journal of Mechanical and Electrical Intelligent System, 6(2), 10-14 (2023).
126.	T. Fujiwara, K. Niiyama, and Y. Yin “Characterization of Undoped and N-Ti Codoped Zn₅Sb₃Te Chalcogenides” Jpn. J. Appl. Phys., 62, SG1023 1-6 (2023).
125.	Y. H. Liu, J. J. Wang, H. Z. Wang, S. Liu, Y. C. Wu, S. G. Hu, Q. Yu, Z. Liu, T. P. Chen, Y. Yin, and Y. Liu “Braille Recognition by E-skin System based on Binary Memristive neural network” Scientific Reports, 13, 5437, 1-10 (2023).
124.	T. Akahane, S. Ishii, K. Yanagisawa, and Y. Yin “Parallel metal-insulator-metal diode with an ultrathin spin-coated hydrogen silsesquioxane insulating layer” Jpn. J. Appl. Phys., 62, SG1006 1-6 (2023).
123.	S. Hosaka, T. Akahane, K. Ohyama, H. Zhang, Y. Yin, and H. Sone “Formation of 7-nm-wide line&spaces in half pitch by 3 dimensional self-assembly of nano-dots using sphere type PS-PDMS” European Journal of Applied Physics, 3(6), 84-90 (2021).
122.	K. Yanagisawa, T. Akahane, and Y. Yin “Electromagnetic Analysis of Antenna Used for Optical Rectenna” Journal of Mechanical and Electrical Intelligent System, 4(2), 19-24 (2021).
121.	Y. Yin “Proposal of a Novel Operation Method to Precisely Control Synaptic Strength for Phase-Change Artificial Synapse” Journal of Mechanical and Electrical Intelligent System, 4(2), 13-18 (2021).
120.	Y. Yin “Nanofabrication for Quantum dot solar Cell with High Conversion Efficiency” Journal of Mechanical and Electrical Intelligent System, 4(1), 36-41 (2021).
119.	Y. Yin, W. Matsuhashi, K. Niiyama, J. Yang, T. Wang, J. Li, Y. Liu, and Q. Yu “C-N-codoped Sb₂Te₃ Chalcogenides for Reducing Writing Current of Phase-Change Devices” Appl. Phys. Lett., 117,153502 1-7 (2020).
118.	J. J. Wang, Q. Yu, S. G. Hu, Y. Liu, R. Guo, T. P. Chen, Y. Yin, and Y. Liu “Winner-takes-all mechanism realized by memristive neural network” Appl. Phys. Lett., 115, 243701 1-4 (2019).
117.	J. Yang, D. P. Song, Y. Yin, L. Z. Chen, L. Y. Chen, Y. Wang, J. Y. Wang “Ferroelectric polarization and fatigue characterization in bismuth-based Aurivillius thin films at lower voltage” Materials Science and Engineering: B, 248, 114408 1-8 (2019).
116.	W. Jia, T. Chen, Y. Wang, S. Qu, Z. Yao, Y. Liu, Y. Yin, W. Zou, F. Zhou, J. Li “Porous equipotential body with heterogeneous nucleation sites: A novel 3D composite current collector for lithium metal anode” Electrochimica Acta, 308, 460-468 (2019).
115.	J. J. Wang, S. G. Hu, X. T. Zhan, Q. Yu, Z. Liu, T. P. Chen, Y. Yin, S. Hosaka and Y. Liu “Handwritten-Digit Recognition by Hybrid Convolutional Neural Network based on HfO₂ Memristive Spiking-Neuron” Scientific Reports, 8, 12546 1-7 (2018).
114.	D. Kong, S. G. Hu, Y. Wu, J. Wang, C. Xiong, Q. Yu, Z. Shi, Z. Liu, T. P. Chen, Y. Yin, S. Hosaka and Y. Liu “Realization of a Power-Efficient Transmitter Based on Integrated Artificial Neural Network” IEEE Access, 6, 68773-68781 (2018).
113.	G. Y. Liu, D. Y. Kong, S. G. Hu, Q. Yu, Z. Liu, T. P. Chen, Y. Yin, S. Hosaka, and Y. Liu “Smart electronic skin having gesture recognition function by LSTM neural network” Appl. Phys. Lett., 113, 084102 1-4 (2018).
112.	J. J. Wang, S. G. Hu, X. T. Zhan, Q. Luo, Q. Yu, Z. Liu, T. P. Chen, Y. Yin, S. Hosaka, and Y. Liu “Predicting house price with a memristor-based artificial neural network” IEEE Access, 6, 16523-16528 (2018).
111.	S. Hu, Y. Liu, T. Chen, Q. Guo, Y. Li, X. Zhang, L. J. Deng, Q. Yu, Y. Yin, and S. Hosaka “γ-ray radiation effects on an HfO₂-based resistive memory devices” IEEE Transactions on Nanotechnology, 17, 61-64 (2018).
110.	T. Wang, Y. Liu, W. Wen, W. Guo, and Y. Yin “The phosphorene under the external electronic field and strain” International Journal of Modern Physics C, 28, 1750131 1-11 (2017).
109.	T. Wang, W. Guo, L. Wen, Y. Liu, B. Zhang, K. Sheng, Y. Yin “Ab initio study of tunable band gap of monolayer and bilayer phosphorene by the vertical electronic field” Journal of Wuhan University of Technology-Mater Sci Ed, 32, 213-216 (2017).
108.	T. Jin, L. Shen, Y. Yin, S. Hosaka, T. Miura, and W. Hou “Scanning near field circular polarization optical microscope for measuring magnetic nanodot arrays” Science of Advanced Materials, 9, 151–155 (2017).
107.	T. Wang, M. Chen, B. Fan, Y. Liu, K. Sheng, Y. Yin and Y. Xie “First-principles calculation of photocurrent in monolayer silicene sheet under small voltages” Optics Communications, 395, 289-292 (2017).
106.	H. Zhang, Y. Zhang, Y. Yin, and S. Hosaka “The dependence of crystallization on temperature in the nanosecond timescale for GeTe-based fast phase-change resistor” Chemical Physics Letters, 650, 102-106 (2016).
105.	Y. Yin, Y. Zhang, Y. Takehana, R. Kobayashi, H. Zhang, and S. Hosaka “Sub 10 ns fast switching and resistance control in lateral GeTe-based phase-change memory” Jpn. J. Appl. Phys., 55, 06GG07 1-6 (2016).
104.	Y. Yin, S. Iwashita, S. Hosaka, T. Wang, J. Li, Y. Liu, and Q. Yu “Ultra-multiple and reproducible resistance levels based on intrinsic crystallization properties of Ge₁Sb₄Te₇ film” Appl. Surf. Sci., 369, 348-353 (2016).
103.	Y. Yin, and S. Hosaka “Three-Dimensional Simulation of Proposed Ring-Confined-Chalcogenide Phase-Change Memory for Reducing Reset Operation Current” Key Engineering Materials, 698, 149-153 (2016).
102.	Y. Yin “Effect of Humidity and Bias on the Size of Nanostructures Fabricated by STM Anodization and its Application to Patterns” Key Engineering Materials, 698, 35-40 (2016).
101.	C. Li, B. Fan, W. Li, L. Wen, Y. Liu, T. Wang, K. Sheng, and Y. Yin “Bandgap engineering of monolayer MoS₂ under strain: a DFT study” Journal of the Korean Physical Society, 66, 1031-1034 (2015).
100.	S. G. Hu, Y. Liu, Z. Liu, T. P. Chen, J. J. Wang, Q. Yu, L. J. Deng, Y. Yin, and S. Hosaka “Associative memory realized by a reconfigurable memristive Hopfield neural network” Nature Communications., 6, 7522 1-8 (2015).
99.	Y. Yin, and T. Wang “Localization of Joule heating in phase-change memory with incorporated nanostructures and nanolayer for reducing reset current” IEEE Trans. Electron Devices, 62, 2184-2189 (2015).
98.	Y. Yin, S. Morioka, S. Kozaki, R. Satoh, and S. Hosaka “Oxygen-doped Sb₂Te₃ for high-performance phase-change memory” Appl. Surf. Sci., 349, 230-234 (2015).
97.	C. Li, Y. Liu, B. Zhang, T. Wang, Q. Guo, K. Sheng, and Y. Yin “The effect of h-BN buffer layers in bilayer graphene on Co (111)” Journal of the Korean Physical Society, 66, 1631-1636 (2015).
96.	B. Mun, B. You, S. Yang, H. Yoo, J. Kim, W. Park, Y. Yin, M. Byun, Y. Jung, and K. Lee “Flexible one diode-one phase change memory array enabled by block copolymer self-assembly” ACS Nano, 9, 4120-4128 (2015).
95.	W. I. Park, J. M. Kim, J. W. Jeong, Y. H. Hur,Y. J. Choi, S.-H. Kwon,S. Hong, Y. Yin, Y. S. Jung, and K. H. Kim “Hierarchically Self-Assembled Block Copolymer Blends for Templating Hollow Phase-change Nanostructures with an Extremely Low Switching Current” Chemistry of Materials, 27, 2673-2677 (2015).
94.	T. Wang,Y. Liu, Q. Guo, B. Zhang，K. Sheng, C. Li, and Y. Yin “Tunable bandgap of monolayer black phosphorus by using vertical electric field: a DFT study” Journal of the Korean Physical Society, 66, 1031-1034 (2015).
93.	A. Nagao, Y. Yin, and S. Hosaka “Computational analysis of heavy ion-DNA interaction using molecular dynamics method” Key Engineering Materials, 643, 193-198 (2015).
92.	T. Jin, R. Takahashi, Y. Yin, and S. Hosaka “Prototype of atomic force microscope with high resolution optical microscope for observing of magnetic nanodot arrays” Key Engineering Materials, 643, 185-191 (2015).
91.	R. Takahashi, J. Tao, Zulfakri Bin. Mohanmad, H. Zhang, M. Huda, V. Nhat, Y. Yin, and S. Hosaka “Observation of magnetic nanodot arrays by using scanning near-field polarization microscope” Key Engineering Materials, 643, 9-13 (2015).
90.	H. Zhang, M. Huda, J. Liu, Y. Zhang,T. Jin,Y. Yin, and S. Hosaka “Long range ordering of 5-nm-sized dot arrays with a pitch of <10 nm along EB-drawn guide lines using PS-PDMS self-assembly” Key Engineering Materials, 643, 3-7 (2015).
89.	S. G. Hu, Y. Liu, Z. Liu, T. P. Chen, Q. Yu, L. J. Deng, Y. Yin, and S. Hosaka “Synaptic long-term potentiation realized in Pavlov's dog model based on a NiOx-based memristor” J. Appl. Phys., 116, 214502 1-6 (2014).
88.	S. Hosaka, T. Akahane, M Huda, T. Komori, H. Zhang, Y. Yin “Ordering of 6-nm-sized nanodot arrays with 10-nm-pitch using self-assembled block copolymers along electron beam-drawn guide-lines” Microelectron. Eng, 123, 54-57 (2014).
87.	H. Zhang, M. Huda, T. Komori, Y. Zhang,Y. Yin, S. Hosaka “ Estimation of pattern resolution using NaCl high-contrast developer by Monte Carlo simulation of electron beam lithography ” Microelectron. Eng, 121, 142-146 (2014).
86.	S. Hosaka, T. Akahane, M. Huda, H. Zhang, and Y. Yin “Controlling of 6-nm-sized and 10-nm-pitched dot arrays ordered along narrow guide lines using PS-PDMS self-assembly” ACS Applied Materials & Interfaces, 6, 6208-6211 (2014).
85.	H. Zhang, S. Hosaka, and Y. Yin “Ordering of self-assembled 5-nm-diameter poly(dimethylsiloxane) nanodots with sub-10 nm pitch using ultra-narrow electron-beam-drawn guide lines and three-dimensional control” Appl. Phys. Lett., 104, 093107 1-4 (2014).
84.	Y. Harada, H. Sone, Y. Yin, and S. Hosaka “Reconstruction of atomic force microscope image using estimated tip shape from impulse response technique” Key Engineering Materials, 596, 147-151 (2014).
83.	Z. Mohamad, M. Huda, T. Komori, R. Alip, H. Zhang, Y. Yin, and S. Hosaka “Fabrication of 25-nm-pitched CoPt magnetic dot arrays using 30-keV-electron beam drawing, RIE and ion milling” Key Engineering Materials, 596, 92-96 (2014).
82.	R. Alip, Z. Mohamad, Y. Yin, and S. Hosaka “Controlled crystallization process of phase-change memory device by a separate heater structure” Key Engineering Materials, 596, 107-110 (2014).
81.	H. Zhang, T. Komori, J. Liu, Z. Mohamad, Y. Zhang, Y. Yin, and S. Hosaka “Estimation of HSQ resist profile by using high contrast developement model for high resolution EB lithography” Key Engineering Materials, 596, 97-100 (2014).
80.	T. Komori, M. Huda, T. Akahane, M. Masuda, J. Liu, Z. Mohamad, Y. Yin, and S. Hosaka “Ordering of self-assembled nanodots improved by guide pattern with low line edge roughness for 5 Tbit/in.2 patterned media” Key Engineering Materials, 596, 78-82 (2014).
79.	J. Liu, M. Huda, Z. Mohamad, H. Zhang, Y. Yin, and S. Hosaka “Fabrication of carbon nanodot arrays with a pitch of 20 nm for pattern-transfer of PDMS self-assembled nanodots” Key Engineering Materials, 596, 88-91 (2014).
78.	M. Huda, Z. Mohamad, T. Komori, Y. Yin, and S. Hosaka “Fabrication of CoPt nanodot array with a pitch of 33 nm using pattern-transfer technique of PS-PDMS self-assembly” Key Engineering Materials, 596, 83-87 (2014).
77.	S. Hosaka, T. Akahane, T. Komori, M. Huda, H. Zhang, Y. Yin “Fabrication of 6-nm-sized nanodot arrays with 12 nm-pitch　along guide lines using both self-assembling　and electron beam-drawing for 5 Tbit/in2 magnetic recording” Key Engineering Materials, 596, 73-77 (2014).
76.	Y. Yin, S. Hosaka “Ultra-multilevel-storage phase‐change memory” Advanced Materials Research, 936, 599-602 (2014).
75.	Y. Yin, T. Itagawa, and S. Hosaka “Electron beam lithography for fabrication of nano phase-change memory” Applied Mechanics and Materials, 481, 30-35 (2014).
74.	Y. Yin, and S. Hosaka “TiSiN films by reactive RF magnetron co-sputtering for ultra-low-current phase-change memory” Applied Mechanics and Materials., 392, 702-706 (2014).
73.	M. Huda, J. Liu, Z. Mohamad, Y. Yin, and S. Hosaka “Attempts to form the 10-nm-order pitch of self-assembled nanodots using PS-PDMS block copolymer” Int. J. of Nanotechnology, 11, 425-433 (2014).
72.	R. I. Alip, Z. Mohamad, Y. Yin, and S. Hosaka “Effect of a separate heater structure for crystallisation to enable multilevel storage phase-change memory” Int. J. of Nanotechnology, 11, 389-395 (2014).
71.	Y. Yin, R. Kobayashi, S. Hosaka “Recrystallization process controlled by staircase pulse in phase change memory” Microelectron. Eng, 113, 61-65 (2014).
70.	Y. Yin, H. Zhang, S. Hosaka, Y. Liu, and Q. Yu “Volume-change-free GeTeN film for high-performance phase-change memory” J. Phys. D: Appl. Phys., 46, 505311 1-5 (2013).
69.	H. Zhang, T. Komori, Y. Zhang, Y. Yin, and S. Hosaka “Simulation of fine resist profile formation by electron beam drawing and development with solubility rate based on energy deposition distribution” Jpn. J. Appl. Phys., 52, 126504 1-5 (2013).
68.	H. Zhang, Y. Zhang, S. Hosaka, and Y. Yin “Resist thickness and resist type for forming nano-sized dot arrays in EB lithography by using Monte Carlo simulation” American Journal of Nanoscience and Nanotechnology, 1, 11-16 (2013).
67.	S. G. Hu, Y. Liu, T. P. Chen, Z. Liu, Q. Yu, L. J. Deng, Y. Yin, and S. Hosaka “Emulating the Ebbinghaus forgetting curve of the human brain with a NiO-based memristor” Appl. Phys. Lett., 103, 133701 1-4 (2013).
66.	Y. Yin, S. Hosaka, W. I. Park, Y. S. Jung, K. J. Lee, B. K. You, Y. Liu, and Q. Yu “Current density enhancement nano-contact phase-change memory for low writing current” Appl. Phys. Lett., 103, 033116 1-5 (2013).
65.	S. G. Hu, Y. Liu, T. P. Chen, Z. Liu, Q. Yu, L. J. Deng, Y. Yin, and S. Hosaka “Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor” Appl. Phys. Lett., 102, 183510 1-4 (2013).
64.	W. I. Park, B. K. You, B. H. Mun, H. K. Seo, J. Y. Lee, S. Hosaka, Y. Yin, C. Ross, K. J. Lee, Y. S. Jung “Self-assembled incorporation of modulated block copolymer nanostructures in phase-change memory for switching power reduction” ACS Nano, 7, 2651-2658 (2013).
63.	S. G. Hu, H. T. Wu, Y. Liu, T. P. Chen, Z. Liu, Q. Yu, Y. Yin, and S. Hosaka “Design of an electronic synapse with spike time dependent plasticity based on resistive memory device” J. Appl. Phys., 113, 114502 1-4 (2013).
62.	M. Huda, J. Liu, Z. Mohamad, Y. Yin, and S. Hosaka “Pattern transfer of 23-nm-diameter block copolymer self-assembled nanodots using CF4 etching with carbon hard mask (CHM) as mask” Materials Science Forum, 737, 133-136 (2013).
61.	Z. Mohamad, R. I. Alip, T. Komori, T. Akahane, H. Zhang, Y. Yin, and S. Hosaka “Fabrication of 30-nm-pitched CoPt magnetic dot arrays using 30-keV-electron beam lithography and ion milling for patterned media” Key Engineering Materials, 534, 118-121 (2013).
60.	Y. Yin, R. I. Alip, Y. Zhang, R. Kobayashi, and S. Hosaka “Multi-level storage in lateral phase-change memory: from 3 to 16 resistance levels” Key Engineering Materials, 534, 131-135 (2013).
59.	S. Hosaka, Z. Mohamad, Y. Yin, H. Sakurai, Y. Kondo, J. Ariake, N. Honda, and M. Suzuki “Measurement of coercive force enhanced by nanometer-sizing of magnetic dot by X-ray magnetic circular dichroism (XMCD)” Key Engineering Materials, 534, 122-125 (2013).
58.	T. Komori, H. Zhang, T. Akahane, Z. Mohamad, Y. Yin, and S. Hosaka “Effect of salty development on forming HSQ resist nanodot arrays with a pitch of 15×15 nm2 by 30-keV electron beam lithography” Key Engineering Materials, 534, 113-117 (2013).
57.	H. Zhang, T. Komori, Z. Mohamad, Y. Yin, and S. Hosaka “Estimation of nano-sized pattern of calixarene and ZEP-520 resists by using EDD in Monte Carlo simulation” Key Engineering Materials, 534, 107-112 (2013).
56.	R. I. Alip, R. Kobayashi, Y. Zhang, Z. Mohamad, Y. Yin, and S. Hosaka “A novel phase-change memory with a separate heater characterized by constant resistance for multilevel storage” Key Engineering Materials, 534, 136-140 (2013).
55.	T. Akahane, T. Komori, J. Liu, M. Huda, Z. Mohamad, Y. Yin, and S. Hosaka “Improved observation contrast of block-copolymer nanodot pattern using carbon hard mask (CHM)” Key Engineering Materials, 534, 126-130 (2013).
54.	S. Kurokami, Z. Mohamad, Y. Yin, S. Hosaka, T. Fuju, Y. Sueyoshi, and H. Okano “Piezoresistive acceleration sensor with high sensitivity and high responsiveness” Key Engineering Materials, 534, 169-172 (2013).
53.	S. G. Hu, Y. Liu, T. P. Chen, Z. Liu, Q. Yu, L. J. Deng, Y. Yin, and S. Hosaka “Realization of transient memory-loss with NiO-based resistive switching device” Applied Physics A ., 109, 349-352 (2012).
52.	Y. Yin, and S. Hosaka “Controlled promotion of crystallization for application to multilevel phase-change memory” Appl. Phys. Lett., 100, 253503 1-4 (2012).
51.	M. Huda, J. Liu, Y. Yin, and S. Hosaka “Fabrication of 5-nm-sized nanodots using self-assemble of polystyrene-poly(dimethyl siloxane)” Jpn. J. Appl. Phys., 51, 06FF10 1-5 (2012).
50.	T. Komori, H. Zhang, T. Akahane, Z. Mohamad, Y. Yin, and S. Hosaka “EB lithography of 15×15 nm² pitched nanodot arrays with a dot size of <10nm using high development contrast salty developer” Jpn. J. Appl. Phys., 51, 06FB02 1-4 (2012).
49.	S. Hosaka, Z. Mohamad, T. Akahane, Y. Yin, H. Sakurai, Y. Kondo, J. Ariake, N. Honda, and M. Suzuki “Coercive force enhanced by nanometer-sizing of magnetic column and measured by X-ray magnetic circular dichroism (XMCD) ” Advanced Materials Research, 490-495, 292-295 (2012).
48.	Y. Yin, R. I. Alip, Y. Zhang, and S. Hosaka “Material engineering for low power consumption and multi-level storage in lateral phase-change memory” Advanced Materials Research, 490-495, 3286-3290 (2012).
47.	Y. Yin, and S. Hosaka “Low-reset-current ring-confined-chalcogenide phase-change memory” Jpn. J. Appl. Phys., 51, 104202 1-5 (2012).
46.	Y. Yin, and S. Hosaka “Controllable crystallization in phase-change memory for low-power multilevel storage” Jpn. J. Appl. Phys., 51, 064101 1-4 (2012).
45.	J. M. Yoon, D. O. Shin, Y. Yin, H. K. Seo, D. Kim, J. H. Jin, Y. T. Kim, B-S Bae, S. O. Kim, and J. Y. Lee “Fabrication of high-density In₃Sb₁Te₂ phase-change nanoarray on glass-fabric reinforced flexible substrate” Nanotechnology, 23, 255301 1-9 (2012).
44.	J. M. Yoon, H. Y. Jeong, S. H. Hong, Y. Yin, H. S. Moon, S. J. Jeong, J. H. Han, Y. I. Kim, Y. T. Kim, H. Lee, S. O. Kim, and J. Y. Lee “Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory” Journal of Materials Chemistry, 22, 1347-1351 (2012).
43.	Y. Yin, and S. Hosaka “Crystal growth suppression by N-doping into chalcogenide for application to next-generation phase-change memory” Key Engineering Materials, 497, 101-105 (2012).
42.	Y. Yin, and S. Hosaka “Influence of phase-change materials and additional layer on performance of lateral phase-change memories” Key Engineering Materials, 497, 106-110 (2012).
41.	H. Zhang, T. Tamura, Y. Yin, and S. Hosaka “Estimation of nanometer-sized EB patterning using energy deposition distribution in Monte Carlo simulation” Key Engineering Materials, 497, 127-132 (2012).
40.	R. Kobayashi, T. Noguchi, Y. Yin, and S. Hosaka “Random-access multilevel storage in phase-change memory by staircase-like pulse programming” Key Engineering Materials, 497, 111-115 (2012).
39.	M. Huda, T. Tamura, Y. Yin, and S. Hosaka “Formation of 12-nm nanodot pattern by block copolymer self-assembly technique” Key Engineering Materials, 497, 122-126 (2012).
38.	T. Akahane, M. Huda, T. Tamura, Y. Yin, and S. Hosaka “Guide pattern functionalization for regularly arranged PS-PDMS self-assembled nanodot pattern by brush processing” Key Engineering Materials, 497, 116-121 (2012).
37.	S. Hosaka, T. Takizawa, D. Terauchi, Y. Yin, H. Sone “Pico-Newton controlled step-in mode NC-AFM using a quadrature frequency demodulator and a slim probe in air for CD-AFM” Key Engineering Materials, 497, 95-100 (2012).
36.	Y. Yin, T. Noguchi, and S. Hosaka “Possibility of freely achievable multilevel storage of phase-change memory by staircase-shaped pulse programming” Jpn. J. Appl. Phys., 50, 105201 1-3 (2011).
35.	M. Huda, T. Akahane, T. Tamura, Y. Yin, and S. Hosaka “Fabrication of 10-nm-order block copolymer self-assembled nanodots for high-density magnetic recording” Jpn. J. Appl. Phys., 50, 06GG06 1-5 (2011).
34.	T. Akahane, M. Huda, T. Tamura, Y. Yin, and S. Hosaka “Orientation-controlled and long-range-ordered self-assembled nanodot array for ultrahigh-density bit-patterned media” Jpn. J. Appl. Phys., 50, 06GG04 1-4 (2011).
33.	S. Hosaka, D. Terauchi, T. Takizawa, Y. Yin, and H. Sone “Step-in mode NC-AFM using a quadrature rrequency demodulator for observing high-aspect ratio structures in air” e-J. Surf. Sci. Nanotech., 9, 122-125 (2011).
32.	S. Hosaka, T. Akahane, M Huda, T. Tamura, Y. Yin, N. Kihara, Y. Kamata, and A. Kitsutsu “Long-range-ordering of self-assembled block copolymer nanodots using EB-drawn guide line and post mixing template” Microelectron. Eng, 88, 2571-2575 (2011).
31.	Y. Yin, and S. Hosaka “Multilevel storage in lateral phase-change memory by promotion of nanocrystallization” Microelectron. Eng, 88, 2794-2796 (2011).
30.	S. Hosaka, Y. Aramomi, H. Sone, Y. Yin, E. Sato, and K. Tochigi “Nanometer resolution stress measurement of the Si gate using illumination collection-type scanning near-field Raman spectroscopy with a completely metal-inside-coated pyramidal probe” Nanotechnology, 22, 025206 1-7 (2011).
29.	Y. Yin, and S. Hosaka “Proposed phase-change memory with a step-like channel for high-performance multi-state storage” Key Engineering Materials, 459, 145-150 (2011).
28.	Y. Yin, T. Noguchi, H. Ohno, and S. Hosaka “Large resistance ratio for high reliability of multi-Level storage in phase-change memory” Key Engineering Materials, 459, 140-144 (2011).
27.	T. Tamura, Y. Tanaka, T. Akahane, Y. Yin, and S. Hosaka “Fabrication of nanometer sized Si dot arrays using Ar ion milling with calixarene resist dot arrays” Key Engineering Materials, 459, 116-119 (2011).
26.	M. Huda, Y. Yin, and S. Hosaka “Self-assembled nanodot fabrication by using diblock copolymer” Key Engineering Materials, 459, 120-123 (2011).
25.	T. Akahane, M. Huda, Y. Yin, and S. Hosaka “Guide pattern for long-range-order nanofabrication of self-Assembled block copolymers” Key Engineering Materials, 459, 124-128 (2011).
24.	S. Hosaka, H. Koyabu, Y. Aramomi, H. Sone, Y. Yin, E. Sato, and K. Tochigi “Prototype of illumination-collection mode scanning near-field optical microscopy and Raman spectroscopy with Au inner-coated aperture-less pyramidal probe” Key Engineering Materials, 459, 129-133 (2011).
23.	S. Hosaka, Y. Tanaka, M. Shirai, Z. Mohamad, and Y. Yin “Possibility of forming 18-nm-pitch ultrahigh density fine dot arrays for 2 Tbit/in.² patterned media using 30-keV electron beam lithography” Jpn. J. Appl. Phys, 49, 046503 1-3 (2010).
22.	S. Hosaka, H. Koyabu, M. Noro, K. Takizawa, H. Sone, and Y. Yin “Observation of Si pattern sidewall using inclination atomic force microscope for evaluation of line edge roughness” J. Nanoscience and Nanotechnology, 10, 4522-4527 (2010).
21.	Y. Yin, T. Noguchi, H. Ohno, and S. Hosaka “Programming margin enlargement by material engineering for multi-level storage in phase-change memory” Appl. Phys. Lett., 95, 133503 1-3 (2009).
20.	Y. Yin, K. Ota, T. Noguchi, H. Ohno, H. Sone, and S. Hosaka “Multi-level-storage in N-doped Sb₂Te₃ based lateral phase-change memory with an additional top TiN layer” Jpn. J. Appl. Phys., 48, 04C063 1-4 (2009).
19.	Y. Yin, T. Noguchi, K. Ota, N. Higano, H. Sone, and S. Hosaka “Reactively sputtered Ti-Si-N films for application as heating layers for low-current phase-change memory” Journal of Physics: Conference Series, 152, 012026 1-6 (2009).
18.	Y. Yin, K. Ota, N. Higano, H. Sone, and S. Hosaka “Multi-level storage in lateral top-heater phase-change memory” IEEE Electron Device Lett., 29, 876-878 (2008).
17.	Y. Yin, N. Higano, H. Sone, and S. Hosaka “Ultramultiple-level storage in TiN/SbTeN double-layer cell for high-density non-volatile memory” Appl. Phys. Lett., 92, 163509 1-3 (2008).
16.	S. Hosaka, Z. Mohamad, M. Shirai, H. Sano, Y. Yin, A. Miyachi, and H. Sone “Extremely small proximity effect in 30 keV electron beam drawing with thin calixarene resist for 20×20 nm² pitch dot arrays” Appl. Phys. Express, 1, 027003 1-3 (2008).
15.	S. Hosaka, Z. Mohamad, M. Shirai, H. Sano, Y. Yin, A. Miyachi, and H. Sone “Nano-dot and pit arrays with a pitch of 25 nm x 25 nm fabricated by EB drawing, RIE and nano-imprinting toward 1 Tb/in² storage” Microelectron. Eng., 85, 774-777 (2008).
14.	Y. Yin, D. Niida, K. Ota, H. Sone, and S. Hosaka “Scanning electron microscope for in situ study of crystallization of Ge₂Sb₂Te₅ in phase-change memory” Rev. Sci. Instrum., 78, 126101 1-3 (2007).
13.	Y. Yin, H. Sone, and S. Hosaka “Lateral SbTeN based multi-layer phase change memory for multi-state storage” Microelectron. Eng., 84, 2901-2906 (2007).
12.	Y. Yin, H. Sone, and S. Hosaka “Characterization of nitrogen-doped Sb₂Te₃ films and their application to phase-change memory” J. Appl. Phys., 102, 064503 1-5 (2007).
11.	S. Hosaka, H. Sano, M. Shirai, Y. Yin, and H. Sone “Nano-dot arrays with a bit pitch and a track pitch of 25 nm formed by EB writing for 1 Tb/in² storage” Microelectron. Eng., 84, 802-805 (2007).
10.	Y. Yin, H. Sone, and S. Hosaka “A chalcogenide-based device with potential for multi-state storage” Microelectron. J., 38, 695-699 (2007).
9.	S. Hosaka, K. Miyauchi, T. Tamura, Y. Yin, and H. Sone “Prototype of phase-change channel transistor for both nonvolatile memory and current control” IEEE Trans. Electron Devices, 54, 517-523 (2007).
8.	Y. Yin, H. Sone, and S. Hosaka “Finite element analysis of dependence of programming characteristics of phase-change memory on material properties of chalcogenides” Jpn. J. Appl. Phys., 45, 8600-8603 (2006).
7.	Y. Yin, A. Miyachi, D. Niida, H. Sone, and S. Hosaka “A novel lateral phase-change random access memory characterized by ultra low reset current and power consumption” Jpn. J. Appl. Phys., 45, L726-L729 (2006).
6.	Y. Yin, H. Sone, and S. Hosaka “Simulation of proposed confined-chalcogenide phase-change random access memory for low reset current by finite element modeling” Jpn. J. Appl. Phys., 45, 6177-6181 (2006).
5.	Y. Yin, H. Sone, and S. Hosaka “Memory effect in metal-chalcogenide-metal structure for ultrahigh-density nonvolatile memories” Jpn. J. Appl. Phys., 45, 4951-4954 (2006).
4.	Y. Yin, A. Miyachi, D. Niida, H. Sone, and S. Hosaka “Electrical properties on phase change and channel current control of ultrathin phase change channel transistor memory” Jpn. J. Appl. Phys., 45, 3238-3242 (2006).
3.	Y. Yin, H. Sone, and S. Hosaka “Dependence of electrical properties of thin GeSbTe and AgInSbTe films on annealing” Jpn. J. Appl. Phys., 44, 6208-6212 (2005).
2.	Y. Yin, J.F. Jiang, Q.Y. Cai, and B.C. Cai “Coulomb blockade in an ultra-thin Ti nanowire at room temperature” Chin. J. Electron. (English Edition), 12, 451-453 (2003).
1.	Y. Yin, J.F. Jiang, Q.Y. Cai, and B.C. Cai “Scanning tunneling microscopy and in situ spectroscopy of ultra thin Ti films and nano sized TiOx dots induced by STM” Appl. Surf. Sci., 199, 319-327 (2002).

213.	E. Sawai, M. Miuchi, and Y. Yin <Invited><BEST STUDENT PRESENTATION AWARD>“Vacancy-introduced GeTe/Sb₂Te₃ superlattice material” International Conference on Technology and Social Science 2024 (ICTSS2024), Online & Cebu Philippines (Dec. 15-19, 2024).
212.	T. Miyata, R. Harakawa, and Y. Yin <Invited><BEST STUDENT PAPER AWARD>“ZrOx and HfOx Thin films and Their Application to ReRAM Devices” International Conference on Technology and Social Science 2024 (ICTSS2024), Online & Cebu Philippines (Dec. 15-19, 2024).
211.	Y. Yin, S. Yoshimoto, S. Fukuda, S. Yahagi, and M. Miuchi <Invited>“Doped Sb₃Te for High-Performance Phase-Change Device” The 36th Symposium on Phase Change Oriented Science (PCOS202４) , Sendai, Japan (Nov. 28-29, 2024).
210.	M. Miuchi, K. Matsuda, E. Sawai, S. Yoshimoto, and Y. Yin “O-Doped GeTe/Sb₂Te₃ Multi-Layer Phase-Change Materials” 37th International Microprocesses and Nanotechnology Conference (MNC 2024), Kyoto, Japan (Nov. 12-15, 2024).
209.	S. Yoshimoto, S. Yahagi, M. Miuchi, and Y. Yin “N-Doped Sb₃Te for High-Performance Phase-Change Device” 37th International Microprocesses and Nanotechnology Conference (MNC 2024), Kyoto, Japan (Nov. 12-15, 2024).
208.	Y. Hirota, Y. Kuwabara, and Y. Yin “Nanodot Formation on Si and Polyimide Using 28000-6000 g/mol Molecular Weight PS-PDMS Blockcopolymer” 37th International Microprocesses and Nanotechnology Conference (MNC 2024), Kyoto, Japan (Nov. 12-15, 2024).
207.	Y. Yin, M. Miuchi, S. Yahagi, E. Sawai, S. Yoshimoto, X. Dong, S. Fukuda, and K. Matsuda <Invited>“Phase-Change Materials and their Applications” 2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2024), Zhuhai, China (Oct. 22-25, 2024).
206.	K. Yano, Y. Yin, and K. Namba “Effect of RESET operation of CiM with PCM on recognition accuracy” IEEE International Conference on Consumer Electronics - Taiwan, 2024, Taichung, Taiwan (July 9-11, 2024).
205.	Y. Yin <Invited>“High-Performance Chalcogenide-based Phase-Change Memory Technology” 2024 IEEE the 13th International Conference on Communications, Circuits, and Systems (ICCCAS) , Xiamen, China (May 10-12, 2024).
204.	Y. Yin, and K. Niiyama “N-O Doped Sb₂Te₃ Phase-Change Materials for High Performance Artificial Synaptic Device” 2024 IEEE 7th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC 2024) , Chongqing, China (March 15-17, 2024).
203.	M. Miuchi, E. Sawai, S Yahagi, and Y. Yin <Invited><BEST STUDENT PAPER AWARD>“Doping O into Conventional GeTe/Sb₂Te₃ Superlattice for Functional Material of Artificial Synapse” The 7th International Conference on Technology and Social Science 2023 (ICTSS2023), Japan (Dec. 2023).
202.	Y. Yin, Y. Kuwabara, and Y. Hirota <Invited><BEST PAPER AWARD>“Nanostructure Formation on Si and Polyimide by Using 47100-9000 g/mol Molecular Weight PS-PDMS Blockcopolymer” The 7th International Conference on Technology and Social Science 2023 (ICTSS2023), Japan (Dec. 2023).
201.	Y. Kuwabara, Y. Hirota, S. Ishii, T. Akahane, and Y. Yin “Nanodot Formation on Si and Polyimide by Using PS-PDMS Blockcopolymer” 36th International Microprocesses and Nanotechnology Conference (MNC 2023), Sapporo, Hokkaido, Japan (Nov. 14-17, 2023).
200.	S. Yahagi, M. Miuchi, S. Yoshimoto, T. Miyata, T. Fujiwara, and Y. Yin “O-Doped GeTe Chalcogenide for High-Performance Phase-Change Device” 36th International Microprocesses and Nanotechnology Conference (MNC 2023), Sapporo, Hokkaido, Japan (Nov. 14-17, 2023).
199.	S. Ishii, T. Akahane, Y. Kuwabara, G. Lin, and Y. Yin “Cross Metal-Insulator-Metal Diode with Hydrogen Silsesquioxane Nanolayer” 36th International Microprocesses and Nanotechnology Conference (MNC 2023), Sapporo, Hokkaido, Japan (Nov. 14-17, 2023).
198.	M. Miuchi, R. Shirakawa, E. Sawai, S. Yahagi, and Y. Yin “First-Principles Study of O-Doped GeTe/Sb₂Te₃ Superlattice” 36th International Microprocesses and Nanotechnology Conference (MNC 2023), Sapporo, Hokkaido, Japan (Nov. 14-17, 2023).
197.	Y. Yin, M. Miuchi, S. Yahagi, and T. Fujiwara <Invited>“Doped Chalcogenides for High-Performance Phase Change Devices” 2023 IEEE 15th International Conference on ASIC (ASICON 2023), Nanjing, China (Oct. 24-27, 2023).
196.	S. Yahagi and Y. Yin <BEST STUDENT PRESENTATION AWARD>“N-Doped GeTe for Highly Reliable Phase-Change Device” 11th International Science, Social Sciences, Engineering and Energy Conference (I-SEEC 2022) and 6th International Conference on Technology and Social Science 2022 (ICTSS 2022) online (Dec. 25-28, 2022).
195.	Y. Yin, T. Fujiwara, K. Niiyama and S. Yahagi <Invited><BEST PRESENTATION AWARD>“Undoped and Doped Zn₅Sb₃Te Chalcogenides for Use in Phase-Change Device with High Thermal Stability” 11th International Science, Social Sciences, Engineering and Energy Conference (I-SEEC 2022) and 6th International Conference on Technology and Social Science 2022 (ICTSS 2022) online (Dec. 25-28, 2022).
194.	T. Akahane, S. Ishii, K. Yanagisawa, and Y. Yin “MIM diode with HSQ insulating thin film for optical rectenna” 35th International Microprocesses and Nanotechnology Conference (MNC 2022), Tokushima, Japan (Nov. 8-11, 2022).
193.	T. Fujiwara, K. Niiyama and Y. Yin “N-Ti Codoped Zn₅Sb₃Te₁ Chalcogenide for Artificial Synaptic Functional Material” 35th International Microprocesses and Nanotechnology Conference (MNC 2022), Tokushima, Japan (Nov. 8-11, 2022).
192.	Y. Yin, K. Niiyama, T. Fujiwara, R. Shirakawa, S. Yahagi and M. Miuchi <Invited>“Recent Progress in Phase Change Materials and Devices” 2022 IEEE 16th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2022), Nanjing, China (Oct. 25-28 2022).
191.	R. Shirakawa and Y. Yin <BEST STUDENT PAPER AWARD>“Finite Element Analysis of Phase-Change Device with Incorporated Nanostructures for Lowering Writing Current” International Conference on Technology and Social Science 2021 (ICTSS2021), Japan (Dec. 7-9, 2021).
190.	Y. Yin, K. Niiyama, W. Matsuhashi and T. Fujiwara <Invited><BEST PRESENTATION AWARD>“Doped Sb₂Te₃ Phase-Change Materials for High Performance Artificial Synaptic Device” International Conference on Technology and Social Science 2021 (ICTSS2021), Japan (Dec. 7-9, 2021).
189.	R. Shirakawa and Y. Yin “Structural analysis for lowering writing current of phase-change device with nanostructure by finite element method” The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Tsukuba, Japan (Nov. 1-4, 2021).
188.	K. Niiyama and Y. Yin “N-O co-doped Sb₂Te₃ chalcogenide memristive material” The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Tsukuba, Japan (Nov. 1-4, 2021).
187.	Y. Yin “C-N-codoped Sb₂Te₃ chalcogenides for high-performance phase-change devices” The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Tsukuba, Japan (Nov. 1-4, 2021).
186.	Y. Yin “Pulse programming method for phase-change artificial synapse” The 4th International Conference on Memristive Materials, Devices & Systems (MEMRISYS), Tsukuba, Japan (Nov. 1-4, 2021).
185.	Y. Yin, K. Niiyama, W. Matsuhashi, R. Shirakawa, T. Fujiwara, and K. Sawao <Invited>“Chalcogenides for Their Application to Phase-Change-Memory-Based Synaptic Devices” 2021 IEEE 14th International Conference on ASIC (ASICON 2021), Kunming, China (Oct. 2021).
184.	Y. Yin, K. Niiyama and T. Fujiwara “N-O Co-Doped Sb₂Te₃ Chalcogenide for High Performance Artificial Synaptic Device” 34th International Microprocesses and Nanotechnology Conference (MNC 2021), Japan (Oct. 26-29, 2021).
183.	Y. Yin, K. Yanagisawa, T. Akahane and R. Mayuzumi “Ordered Nanodot Array Fabrication for Quantum Dot Solar Cell” 34th International Microprocesses and Nanotechnology Conference (MNC 2021), Japan (Oct. 26-29, 2021).
182.	K. Yanagisawa, T. Akahane, and Y. Yin <BEST STUDENT PAPER AWARD>“Electromagnetic Analysis of Antenna Used for Optical Rectenna” International Conference on Technology and Social Science 2020 (ICTSS2020), Japan (Dec. 2020).
181.	Y. Yin <Invited><BEST PAPER AWARD>“Proposal of a Novel Operation Method to Precisely Control Synaptic Strength for Phase-Change Artificial Synapse” International Conference on Technology and Social Science 2020 (ICTSS2020), Japan (Dec. 2020).
180.	Y. Yin <Invited><BEST PRESENTATION AWARD>“Nanofabrication for Quantum Dot Solar Cell with High Conversion Efficiency” International Conference on Technology and Social Science 2020 (ICTSS2020), Japan (Dec. 2020).
179.	T. Akahane, K. Yanagisawa, and Y. Yin “Vertical Stack MIM Diode Design for Optical Rectenna” 33rd International Microprocesses and Nanotechnology Conference (MNC 2020), Japan (Nov. 2020).
178.	Y. Yin, W. Matsuhashi, K. Niiyama, D. Nishijo, and K. Sawao <Invited>“Chalcogenides and their applications to advanced phase-change-devices toward future IoT era” 2020 IEEE 15th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2020), Kunming, China (Oct. 2020).
177.	Y. Yin, T. Akahane and D. Nishijo “Block-copolymer-based Nanostructure Fabrication and Its Application to Low-power Phase-change Memory” 32nd International Microprocesses and Nanotechnology Conference (MNC 2019), Hiroshima, Japan (Oct. 2019).
176.	Y. Yin “C-N-Codoped Sb₂Te₃ Chalcogenidesfor Reducing Power Consumption of Phase-Change Devices” 32nd International Microprocesses and Nanotechnology Conference (MNC 2019), Hiroshima, Japan (Oct. 2019).
175.	T. Akahane, and Y. Yin “Control of self-assembled nanodot array orientation using electron beam drawing” 4th International Conference on Advanced Engineering and Its Education in 2019 (4th ICAEE 2019), Gunma, Japan (Sep. 2019)
174.	Y. Yin, T. Jin, T. Komori, and S. Hosaka <Invited>“Fabrication of nanodot array and its characterization by scanning near field circular polarization optical microscope” the 5th International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE 2018), Jeju, Korea (Nov. 2018).
173.	Y. Yin <Invited>“Chalcogenide-based Artificial Intelligence Synaptic Device” 2018 IEEE 14th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2018), Qingdao, China (Oct. 2018).
172.	Y. Yin, R. Satoh and K. Sawao <Keynote>“Properties of N-doped Sb₂Te₃ Film and Its Application to Artificial Intelligence Synaptic Device” International Conference on Technology and Social Science 2018 (ICTSS 2018), Kiryu, Japan (Apr. 2018).
171.	Y. Yin <Keynote>“High-Performance Phase-Change Memory” Gunma University International Symposium for Collaboration of Research and Education 2018 (GUISCRE2018), Ikaho & Kiryu, Japan (Mar. 2018).
170.	K. Sawao, and Y. Yin “N-doped Sb2Te3 synaptic device for brain-like computer” Gunma International Symposium 2018 on Membranes, 2D Matters and Device Applications, Gunma, Japan (Jan. 2018)
169.	D. Nishijo, and Y. Yin “Phase-change Memory with Low Programing Current and Power Consumption for IoT Application” Gunma International Symposium 2018 on Membranes, 2D Matters and Device Applications, Gunma, Japan (Jan. 2018)
168.	Y. Yin and R. Satoh “N-doped Chalcogenide Films and Their Application to Multi-level Storage Phase-change Memory” Gunma International Symposium 2018 on Membranes, 2D Matters and Device Applications, Gunma, Japan (Jan. 2018)
167.	Y. Yin “Ultrahigh-density Nano Phase-change Memory Array” Gunma International Symposium 2018 on Membranes, 2D Matters and Device Applications, Gunma, Japan (Jan. 2018)
166.	Y. Yin <Invited>“Phase-Change Materials and Memory Devices for IoT Application” The IEEE 12th International Conference on ASIC (ASICON 2017), Guiyang, China (Oct. 2017).
165.	Y. Yin “Nano Phase-Change Memory Array” 3rd International Symposium of Gunma University Medical Innovation (GUMI) and 8th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2016)
164.	Y. Yin, D. Nishijo, K. Sawao, K. Ohyama, T. Akahane, T. Komori, M. Huda, H. Zhang, and S. Hosaka <Invited>“Advanced Nanofabrication and its Application to Nano Phase-Change Memory for Reducing Writing Current” 2016 IEEE 13th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2016), Hangzhou, China (Oct. 2016).
163.	Y. Yin and S. Hosaka <Invited>“Fast switching and resistance control in chalcogenide-based memory device” The Collaborative Conference on Crystal Growth (3CG 2016), San Sebastian, Spain (Sep. 2016).
162.	Y. Yin and S. Hosaka “Resistance Control for Multilevel Storage in Phase-Change Memory by Pulse Engineering” The 7th IEEE international Nanoelectronics Conference 2016 (INEC 2016), Chengdu, China (May 2016).
161.	Y. Yin <Invited>“Multilevel Storage in Lateral Phase-Change Memory” 2016 International Workshop on Information Storage / 10th International Symposium on Optical Storage (IWIS/ISOS 2016), Changzhou, Jiangsu, China (Apr. 2016).
160.	B. Mun, B. You, D. Joe, S. Yang, H. Yoo, Y. Yin, Y. Jung, and K. Lee “Realization of Flexible Block Copolymer-Incorporated One Diode-One Phase Change Memory Array on Plastic Substrate” 2015 MRS Fall Meeting, Boston, Massachusetts, USA (Dec. 2015).
159.	Y. Yin <Invited>“Crystal growth control in chalcogenide and its application to multilevel storage in phase-change memory” The Collaborative Conference on Crystal Growth (3CG 2015), Hongkong (Dec. 2015).
158.	S. Kozaki, T. Jin, H. Zhang, V. Nhat, S. Nomoto, H. Sone, Y. Yin, S. Hosaka, and K. Miura “LabVIEW-Controlled Scanning Near-Field Polarization Microscope” The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA) and The 7th International Conference on Advanced Micro-Device Engineering (7th AMDE), Kiryu, Japan (Nov. 2015).
157.	H. Zhang, S. Hosaka, and Y. Yin “Challenge to Control 5-nm-sized Dot Arrays with a Pitch of <10 nm in a Long-range Order along EB-drawn Guide Lines Using PS-PDMS Self-assembly” 28th International Microprocesses and Nanotechnology Conference (MNC 2015), Toyama, Japan (Nov. 2015).
156.	Y. Yin, Y. Zhang, Y. Takehana, R. Kobayashi, H. Zhang and S. Hosaka “Sub 10 ns Fast Switching and Resistance Control in Lateral GeTe-Based Phase-Change Memory” 28th International Microprocesses and Nanotechnology Conference (MNC 2015), Toyama, Japan (Nov. 2015).
155.	Y. Yin “Nanoscale Localized Joule Heating in Phase-Change Memory for Ultra-Low Operation Current” 28th International Microprocesses and Nanotechnology Conference (MNC 2015), Toyama, Japan (Nov. 2015).
154.	Y. Yin, and S. Hosaka <Invited>“Nanosecond-Order Fast Switching and Ultra-Multilevel Storage in Lateral GeTe and Ge₁Sb₄Te₇-Based Phase-Change Memories” 2015 IEEE 11th International Conference on ASIC (ASICON 2015), Chengdu, China (Nov. 2015).
153.	Y. Yin, and S. Hosaka “Nano-contact phase-change memory with nanostructures and a highly-resistive thin layer” the 41st International Micro & Nano Engineering Conference (MNE 2015),The Hague, The Netherlands (Sep. 2015).
152.	Y. Yin, and S. Hosaka “Properties of Ge₁Sb₄Te₇ and its application to two terminal synaptic device” the 41st International Micro & Nano Engineering Conference (MNE 2015),The Hague, The Netherlands (Sep. 2015).
151.	S. Hosaka, M. Ohyama, H. Zhang, Y. Yin, and H. Sone “Ordering of either nano-dot arrays or nano-lines along EB-drawn resist guide lines using PS-PDMS self-assembly with a molecular weight of 1.46 kg/mol” the 41st International Micro & Nano Engineering Conference (MNE 2015),The Hague, The Netherlands (Sep. 2015).
150.	Y. Yin “Characterization of Ge₁Sb₄Te₇ Chalcogenide for its Application to Synaptic Device” the International Conference on Nanoscience and Technology, China 2015 (ChinaNANO 2015), Beijing, China (Sep. 2015).
149.	Y. Yin, and S. Hosaka “Localization of Joule Heating in Phase-Change Memory with Incorporated Insulating Nanostructures and Nanolayer for Ultralow Operation Current” the International Conference on Nanoscience and Technology, China 2015 (ChinaNANO 2015), Beijing, China (Sep. 2015).
148.	Y. Yin, S. Morioka, R. Satoh, S. Kozaki, S. Hosaka “Oxygen-Doped Sb₂Te₃ for Low-Power-Consumption Phase-Change Memory” 8th International Conference on Materials for Advanced Technologies (ICMAT2015), Suntec, Singapore (June-July 2015)
147.	Y. Yin, S. Hosaka “Ultrahigh-density Multilevel-storage Nano Phase-change Memory Array” 8th International Conference on Materials for Advanced Technologies (ICMAT2015), Suntec, Singapore (June-July 2015)
146.	S. Hosaka, Z. Mohamad, R. Tatahashi, T. Jin, Y. Yin, H. Sakurai, M. Suzuki “Fabrication of Nanometer-sized Magnetic Dots and Their Magnetic Property” 8th International Conference on Materials for Advanced Technologies (ICMAT2015), Suntec, Singapore (June-July 2015)
145.	R. Takahashi, T. Jin, K. Ohayama, V. Nhat, H. Sone, Y. Yin, and S. Hosaka “High Resolution Magnetization Measurement of External-field-Switched Magnetic Nanodot Using Scanning Near-field Polarization Microscopy” 22nd International Colloquium on Scanning Probe Microscopy (ICSPM22), Shizuoka, Japan (Dec. 2014)
144.	R. Takahashi, T. Jin, V. L. M. Nhat, H. Sone, Y. Yin, and S. Hosaka “Magnetization Imaging of Magnetic Nanodot Using Scanning Near-field Polarization Microscopy Under External Magnetic Field” 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2014)
143.	K. Ohyama, H. Zhang, M. Huda, H. Sone, Y. Yin, and S. Hosaka “Thickness Dependence On Ordering Of Dots And Lines Along EB-drawn Guide Lines Using Self-assembly Of Polystyrene-Poly(dimethyl-siloxane)” 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2014)
142.	T. Jin, R. Takahashi, Y. Yin, and S. Hosaka “Magnetization of magnetic nanodots measured using a near-field polarization optical scanning microscope” 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2014)
141.	Y. Yin, and S. Hosaka “Ge1Sb2Te4-based N-doped Chalcogenide for Application to Multi-Level-Storage Phase-Change Memory” 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2014)
140.	Y. Yin, and S. Hosaka “Low-Reset-Current Ring-Confined-Chalcogenide Phase-Change Memory” 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2014)
139.	Y. Yin, and S. Hosaka “N-doped GeTe Chalcogenide Film for High-Performance Nonvolatile Phase-Change Memory” 1st International Symposium of Gunma University Medical Innovation (GUMI) and 6th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2014)
138.	T. Jin, R. Takahashi, Y. Yin, S. Hosaka, and T. Miura “Measurement of Magnetic Nanodot Arrays Using Scanning Near-Field Polarization Microscope” 27th International Microprocesses and Nanotechnology Conference (MNC 2014), Fukuoka, Japan (Nov. 2014)
137.	Y. Yin, S. Iwashita, and S. Hosaka “Ge1Sb4Te7 Ultra-Multi-Level Phase-Change Memory” 27th International Microprocesses and Nanotechnology Conference (MNC 2014), Fukuoka, Japan (Nov. 2014)
136.	Y. Yin, and S. Hosaka “Characterization of N-Doped GeTe Films and Their Applications to High-Performance Nano Phase-Change Memory” 27th International Microprocesses and Nanotechnology Conference (MNC 2014), Fukuoka, Japan (Nov. 2014)
135.	Y. Yin, and S. Hosaka “Ultrasmall-Volume-Change Chalcogenide for Performance Improvement of Phase-Change Memory” 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2014), Guilin, China (Oct. 2014).
134.	S. Hosaka, R. Takahashi, T. Jin, H. Zhang, M. Huda, andY. Yin “Observation of Nanometer-Sized Magnetization of PtCo Magnetic Dot Arrays Using Scanning Near-Field Polarization Microscopy” the 40th International Micro & Nano Engineering Conference (MNE 2014), Lausanne, Switzerland (Sep. 2014).
133.	Y. Yin, S. Iwashita, and S. Hosaka “Ultramultiple-level storage in Ge1Sb4Te7-based phase-change memory” the 40th International Micro & Nano Engineering Conference (MNE 2014), Lausanne, Switzerland (Sep. 2014).
132.	Y. Yin, S. Iwashita, and S. Hosaka “Multilevel Storage and its Cycling in Ge1Sb4Te7 Phase-Change Memory” The International Conference on Solid State Devices and Materials (SSDM2014), Tsukuba, Ibaraki, Japan (Sep. 2014).
131.	S. Hosaka, R. Takahashi, T. Jin, H. Zhang, M. Huda, H. Sone, Y. Yin “Observation of Nanometer-Sized Magnetic Dots and its Magnetization using a Scanning Near-Field Polarization Microscopy” 3rd International Conference on Advanced Materials and Practical Nanotechnology (3rd ICAMPN), Jakarta, Indonesia (Aug. 2014)
130.	Y. Yin, and S. Hosaka “Modification of GeTe Chalcogenide by N-doping for High-Performance Nonvolatile Phase-Change Memory” 3rd International Conference on Advanced Materials and Practical Nanotechnology (3rd ICAMPN), Jakarta, Indonesia (Aug. 2014)
129.	Y. Yin, and S. Hosaka “Ultra-Multilevel-Storage Phase-Change Memory” 2014 International Conference on Materials Science and Engineering Technology (MSET 2014), Shanghai, China (June 2014)
128.	Y. Yin, and S. Hosaka “N-doped GeTe for High-Performance Phase-Change Memory” the 23rd Australian Conference on Microscopy and Microanalysis (ACMM23) and the International Conference on Nanoscience and Nanotechnology (ICONN 2014), Adelaide, Australia (Feb. 2014)
127.	Y. Yin, and S. Hosaka “Reduction of Write Current in Phase-Change Memory by Incorporating Self-Assembled Nanostructures” the 23rd Australian Conference on Microscopy and Microanalysis (ACMM23) and the International Conference on Nanoscience and Nanotechnology (ICONN 2014), Adelaide, Australia (Feb. 2014)
126.	H. Zhang, M. Huda, J. Liu, Y. Zhang, Y. Yin, and S. Hosaka “Long Range Ordering of Nanodots with Sub-10-nm-Pitch and 5-nm-dot Size using EB-drawn Guide Line and Self-assembly of Polystyrene-Poly(dimethyl siloxane)” 5th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2013)
125.	T. Jin, R. Takahashi, Y. Yin, and S. Hosaka “Prototype of atomic force microscope with high resolution optical microscope for observing of magnetic nanodot arrays” 5th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2013)
124.	M. Huda, H. Zhang, J. Liu, Y. Yin, and S. Hosaka “Fabrication of Ultrahigh Density 10-nm-Order Sized Si Nanodot Array by Pattern-Transfer of Block Copolymer Self-Assembled Nanodot Array” 5th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2013)
123.	R. Takahashi, J. Tao, Zulfakri Bin. Mohanmad, H. Zhang, M. Huda, V. Nhat, Y. Yin, and S. Hosaka “Observation of magnetic nanodot arrays by using scanning near-field polarization microscope” 5th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2013)
122.	Y. Yin, and S. Hosaka “Nano-contact phase-change memory” 5th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2013)
121.	A. Nagao, Y. Yin, and S. Hosaka “Computational analysis of heavy ion-DNA interaction using molecular dynamics method” 5th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2013)
120.	S. Hosaka, R. Takahashi, T. Jin, Z. Mohamad, H. Zhang, M. Huda, Hayato. Sone, and Y. Yin “Scanning Near-field Polarization Microscopy for magnetization of nanometer-sized magnetic column” 5th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2013)
119.	Y. Yin, T. Itagawa, and S. Hosaka “Electron Beam Lithography for Fabrication of Nano Phase-Change Memory” 2013 2nd International Symposium on Quantum, Nano and Micro Technologies (ISQNM 2013), Singapore (Dec. 2013)
118.	S. Hosaka, H. Zhang, M. Huda, and Y. Yin “Nano-contact for small power consumption in phase change memory” The 25th Symposium on Phase Change Oriented Science, Sendai, Miyagi, Japan (Nov. 2013)
117.	S. Hosaka, M. Huda, H. Zhang, T. Komori, and Y. Yin <Invited>“Single-nanodot Arrays and Single-nanohalf-pitch Lines Formed using PS-PDMS Self-assembly and Electron Beam Drawing” 26th International Microprocesses and Nanotechnology Conference (MNC 2013), Sapporo, Hakkaido, Japan (Nov. 2013)
116.	M. Huda, J. Liu,　Y. Yin, and S. Hosaka “Fabrication of Ultrahigh Density 10-nm-order Sized C Nanodot Array as a Pattern-transfer Mask” 26th International Microprocesses and Nanotechnology Conference (MNC 2013), Sapporo, Hakkaido, Japan (Nov. 2013)
115.	Y. Yin, and S. Hosaka “Ultralow-write-current Nano-contact Phase-change Memory” 26th International Microprocesses and Nanotechnology Conference (MNC 2013), Sapporo, Hakkaido, Japan (Nov. 2013)
114.	M. Huda, J. Liu, Y. Yin, S. Hosaka “Fabrication of Ultrahigh Density 10-nm-Order Sized Si Nanodot Array by Pattern-Transfer of Block Copolymer Self-Assembled Nanodots” 8th NANOSMAT, Granada, SPAIN (Sep. 2013)
113.	H. Zhang, T. Komori, Y. Zhang, Y. Yin, and S. Hosaka, “Estimation of Pattern Resolution Using NaCl High Contrast Developer by Monte Carlo Simulation of Electron Beam Lithography” the 39th International Micro & Nano Engineering Conference (MNE 2013), London, UK (Sep. 2013)
112.	S. Hosaka, T. Akahane, T. Komori, M. Huda, H. Zhang, and Y. Yin, “Margin of 30-keV-EB drawing and graphoepitaxy of PS-PDMS self-assembly with EB drawn guide lines for formation of sub-10-nm-sized dot arrays” the 39th International Micro & Nano Engineering Conference (MNE 2013), London, UK (Sep. 2013)
111.	M. Huda, J. Liu, Y. Yin, S. Hosaka “Large Area Ultrahigh Density 10-nm-Order Sized C Nanodot Array as a Pattern-Transfer Mask” the 39th International Micro & Nano Engineering Conference (MNE 2013), London, UK (Sep. 2013)
110.	Y. Yin, R. Kobayashi, Y. Zhang, R. I. Alip, and S. Hosaka “Staircase pulse programming for recrystallization control in phase-change memory” the 39th International Micro & Nano Engineering Conference (MNE 2013), London, UK (Sep. 2013)
109.	Y. Yin, and S. Hosaka “Nano-contact phase-change memory for ultralow writing reset current” the 39th International Micro & Nano Engineering Conference (MNE 2013), London, UK (Sep. 2013)
108.	Y. Yin, and S. Hosaka “TiSiN Films by Reactive RF Magnetron Co-Sputtering for Ultra-Low-Current Phase-Change Memory” 5th International Conference on Mechanical and Electrical Technology (ICMET 2013), Chengdu, China (July 2013)
107.	S. Hosaka, Y. Yin, T. Komori, M. Huda “Long-range Ordering of 6-nm-sized Nanodot Arrays Using Self-assemble and Eb-drawing” 7th International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore (June-July 2013)
106.	H. Zhang, T. Komori, S. Hosaka, Y. Yin “Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution ” 7th International Conference on Materials for Advanced Technologies (ICMAT), Suntec, Singapore (June-July 2013)
105.	Y. Yin, Y. Zhang, and S. Hosaka “Fast Operation and Freely Achievable Multiple Resistance Levels in GeTe-Based Lateral Phase Change Memory” 2013 MRS Spring Meeting, San Francisco, California, USA (Apr. 2013).
104.	Y. Yin, and S. Hosaka “Low-Volume-Change High-Crystallization-Temperature Phase-Change Material for High-Performance Phase-Change Memory by N-Doping into GeTe” 2013 MRS Spring Meeting, San Francisco, California, USA (Apr. 2013).
103.	Z. Mohamad, T. Akahane, M. Huda, R. I. Alip, M. Suzuki, Y. Yin, and S. Hosaka “Nanometer effect of dot diameter for 40 nm magnetic dot pitch for patterned media prepared by EBL and ion milling and measured by Micro X-Ray Magnetic Circular Dichroism” the Sixth International Conference on Advanced Materials and Nanotechnology (AMN6), Auckland, New Zealand (Feb. 2013).
102.	M. Huda, J. Liu, Z. Mohamad, Y. Yin, and S. Hosaka “Challenge to form the 10-nm-order pitch of self-assembled nanodots using PS-PDMS block copolymer” the Sixth International Conference on Advanced Materials and Nanotechnology (AMN6), Auckland, New Zealand (Feb. 2013).
101.	Z. Mohamad, M. Huda, T. Komori, R. Alip, H. Zhang, Y. Yin, and S. Hosaka “Fabrication of 25-nm-Pitched CoPt Magnetic Dot Arrays using 30-keV-Electron Beam Drawing, RIE and Ion milling” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
100.	R. Alip, Z. Mohamad, Y. Yin, and S. Hosaka “Controlled Crystallization Process of Phase-change Memory device by a Separate Heater Structure” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
99.	H. Zhang, T. Komori, Y. Zhang, Y. Yin, and S. Hosaka “A New Modeling of Calculating Resist Profile Based on Energy Deposition Distribution in Electron Beam Lithography” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
98.	T. Komori, M. Huda, M. Masuda, J. Liu, Z. Mohamad, Y. Yin, and S. Hosaka “Ordering of Self-Assembled Nanodots Improved by Guide Pattern with Low Line Edge Roughness for 5 Tbit/in.2 Patterned Media” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
97.	J. Liu, M. Huda, H. Zhang, Y. Yin, and S. Hosaka “Fabrication of Carbon Nanodot Arrays with a Pitch of 20 nm for Pattern-Transfer of PDMS Self-Assembled nanodots” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
96.	M. Huda, Z. Mohamad, T. Komori, Y. Yin, and S. Hosaka “Fabrication of CoPt Nanodot Array with a Pitch of 33 nm Using Pattern-Transfer Technique of PS-PDMS Self-Assembly” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
95.	S. Hosaka, T. Akahane, T. Komori, M. Huda, Y. Yin, N. Kihara, Y. Kamata, and A. Kikitsu “Fusion of top-down and bottom-up technologies for single nano-patterning ” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
94.	Y. Yin, Y. Zhang, and S. Hosaka “Fast Operation and Resistance Control in GeTe-Based Lateral Phase Change Memory” 4th International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2012)
93.	M. Huda, J. Liu, Z. Mohamad, Y. Yin, and S. Hosaka “Pattern Transfer of 23-nm-Diameter Block Copolymer Self- Assembled Nanodots Using CF4 etching with Carbon Hard Mask (CHM) as Mask” Nanotechnology Applications in Energy and Environment (NAEE2012), Bandung, Indonesia (Sep. 2012).
92.	Y. Yin, R. I. Alip, and S. Hosaka “Current-driven crystallization promotion for multilevel storage in phase-change memory” The 24th Symposium on Phase Change Oriented Science (PCOS 2012), Hamahatsu, Shizuoka, Japan (Nov. 2012).
91.	Y. Yin, and S. Hosaka “Controlled promotion of crystallization for multilevel phase-change memory” the 38th International Micro & Nano Engineering Conference (MNE 2012), Toulouse, France (Sep. 2012)
90.	Y. Yin, and S. Hosaka “Low-stress high-crystallization-temperature doped GeTe for improving performance of phase-change memory” the 38th International Micro & Nano Engineering Conference (MNE 2012), Toulouse, France (Sep. 2012)
89.	S. Hosaka, T. Akahane, M. Huda, J. Liu, Y. Yin, N. Kihara, Y. Kamata, and A. Kikitsu “Ordering of 12 nm-pitched nanodot arrays using block copolymers self-assemble and EB drawn guide line template for 5 Tbit/in2 magnetic recording” the 38th International Micro & Nano Engineering Conference (MNE 2012), Toulouse, France (Sep. 2012)
88.	S. Hosaka, Z. Mohamad, T. Akahane, Y. Yin, H. Sakurai, Y. Kondo, J. Ariake, N. Honda, and M. Suzuki “Coercive force enhanced by nanometer-sizing of magnetic column and measured by X-ray magnetic circular dichroism (XMCD)” 2012 International Conference on Mechatronics and Intelligent Materials, Guilin, China (May 2012)
87.	Y. Yin, and S. Hosaka <Keynote>“Multi-Level Storage Phase-Change Memory” 2012 International Conference on Mechatronics and Intelligent Materials, Guilin, China (May 2012)
86.	T. Okino, T. Shimada, A. Yuzawa, R. Yamamoto, N. Kihara, Y. Kamata, A. Kikitsu, T. Akahane, Y. Yin, and S. Hosaka “Evaluation of ordering of block copolymers with pre-patterned guides for bit patterned media” SPIE Advanced Lithography 2012, San Jose, California, USA (Feb. 2012)
85.	Y. Yin, R. I. Alip, Y. Zhang, R. Kobayashi, and S. Hosaka “Multi-Level Storage in Lateral Phase-Change Memory: from 3 to 16 Resistance Levels” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
84.	Z. Mohamad, T. Komori, T. Akahane, R. I. Alip, H. Zhang, Y. Yin, S. Hosaka “Fabrication of 30-nm-Pitched CoPt Magnetic Dot Arrays Using 30-keV-Electron Beam Lithography and Ion Milling for Patterned Media” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
83.	R. I. Alip, R. Kobayashi, Y. Zhang, Y. Yin, S. Hosaka “A Novel Phase-Change Memory with a Separate Heater Characterized by a Constant Resistance for Multilevel Storage” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
82.	T. Akahane, M. Huda, Z. B. Mohamad, Y. Yin, and S. Hosaka “Improved Observation Contrast of Blockcopolymer Nanodot Pattern Using Carbon Hard Mask (CHM)” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
81.	T. Komori, H. Zhang, T. Akahane, Z. Mohamad, Y. Yin, and S. Hosaka “The Effect of Salt Development for Forming HSQ Resist Nanodot Arrays with a Pitch of 15 × 15 nm2 by 30-keV EB drawing” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
80.	H. Zhang, T. Komori, Y. Yin, S. Hosaka “Calculation of High-contrast HSQ resist using Energy Deposition Distribution in EB lithography” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
79.	S. Kurokami, Z. Mohamad, Y. Yin, S. Hosaka, T. Fuju, Y. Sueyoshi, and H. Okano “Piezoresistive Acceleration Sensor with High Sensitivity and High Responsiveness” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
78.	S. Hosaka, Z. Mohamad, Y. Yin, H. Sakurai, Y. Kondo, J. Ariake, and M. Suzuki “Nanometer-size effect of the coercive force of fine magnetic column measured by X-ray magnetic circular dichroism (XMCD)” 3rd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2011)
77.	S. Hosaka, T. Noguchi, S. Kobayashi, R. I. B. Alip, and Y. Yin “Random access multi-levels phase changing using pulse modulation” the 23rd Symposium on Phase Change Optical Information Storage (PCOS2011), Atami, Japan (Nov. 2011)
76.	M. Huda, J. Liu, Y. Yin,and S. Hosaka “Fabrication of 6-nm Block Copolymer Self-Assembled Nanodots for Ultrahigh-Density Magnetic Recording” 24rd International Microprocesses and Nanotechnology Conference, Kyoto, Japan (Oct. 2011)
75.	T. Komori, H. Zhang, T. Akahane, Z. Mohamad, Y. Yin,and S. Hosaka “EB Drawing of 15 nm × 15 nm Pitched Nanodot Arrays with a Size of <10nm using High Contrast Develope” 24rd International Microprocesses and Nanotechnology Conference, Kyoto, Japan (Oct. 2011)
74.	M. Huda, Y. Yin, and S. Hosaka “Formation of 13-nm-Pitch Block Copolymer Self-Assembled Nanodots Pattern for High-Density Magnetic Recording” The 4th Nanoscience and Nanosmposium, Bali, Indonesia (Sep. 2011)
74.	M. Huda, Y. Yin, and S. Hosaka “Formation of 13-nm-Pitch Block Copolymer Self-Assembled Nanodots Pattern for High-Density Magnetic Recording” The 4th Nanoscience and Nanosmposium, Bali, Indonesia (Sep. 2011)
73.	S. Hosaka, T. Akahane, M Huda, T. Komori and Y. Yin “Long-range-ordering of Nanodot Arrays using Self-assembly and Post and Line Mixing Templates” The 4th Nanoscience and Nanosmposium, Bali, Indonesia (Sep. 2011)
72.	S. Hosaka Z. Mohamad, M. Shirai, Y. Yin, H. Sakurai, Y. Kondo, J. Ariake, N. Honda, and M. Suzuki “Coercive force enhanced by nanaometer-sizing of magnetic column for patterned media and measured by X-ray magnetic circular dichroism in SR” the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), Beijing, China (Sep. 2011).
71.	H. Zhang, Y. Yin, and S. Hosaka “Estimation of Nanometer-Scale Patterning of Calixarene Resist in Electron Beam Lithography” the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), Beijing, China (Sep. 2011).
70.	Y. Yin, T. Itagawa, and S. Hosaka “10-nm-Order-Wide Nanowire Phase-Change Memory” the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), Beijing, China (Sep. 2011). ☆　BEST POSTER AWARD 20 best posters were selected from total 890 posters by the Scientific Committee of ChinaNANO 2011 during the conference, ten for regular authors and ten for students.
69.	Y. Yin, M. Huda, T. Akahane, and S. Hosaka “Diblock Copolymer Self-Assembled Nanodots for Next-Generation Magnetic Recording” the International Conference on Nanoscience and Technology, China 2011 (ChinaNANO 2011), Beijing, China (Sep. 2011).
68.	Y. Yin, T. Itagawa, and S. Hosaka “Electron Beam Lithography for 10-nm-Wide Nanowire Phase-Change Memory” 2011 MRS Spring Meeting, San Francisco, California, USA (Apr. 2011).
67.	Y. Yin, and S. Hosaka “Multi-level Storage in Lateral Multi-layer and Single Layer Phase-change Memory” 2011 MRS Spring Meeting, San Francisco, California, USA (Apr. 2011).
66.	Y. Yin and S. Hosaka “Characterization of N-Doped Chalcogenide Film for Application to Phase-Change Memory as Next-Generation Memory” 2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010)
65.	R. Kobayashi, T. Noguchi, Y. Yin, and S. Hosaka “Random-Access Multilevel Storage in Phase-Change Memory by Staircase-Like Pulse Programming” 2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010)
64.	M. Huda, T. Tamura, Y. Yin, and S. Hosaka “Formation of 12-nm Nanodot Pattern by Diblock Copolymer Self-Assembly Technique” 2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010)
63.	T. Akahane, M. Huda, T. Tamura, Y. Yin, and S. Hosaka “Guide Pattern Functionalization for Regularly Arranged PS-PDMS Self-Assembled Nanodot Pattern by Brush Processing” 2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010)
62.	H. Zhang, T. Tamura, Y. Yin, and S. Hosaka “Monte Carlo Simulation of Electron Scattering Processes for High-Resolution Electron Beam Lithography” 2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010)
61.	T. Tamura, H. Zhang, T. Akahane, M. Huda, T. Komori, Y. Yin, and S. Hosaka “Fabrication of Nanometer Sized Si Dot Arrays Using Reactive Ion Etching with Metal Dot Arrays” 2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010)
60.	S. Hosaka, T. Takizawa, D. Terauchi, Y. Yin, and H. Sone “Pico-Newton Controlled Step-in Mode NC-AFM Using a Quadrature Demodulator and a Slim Probe in Air for CD-AFM” 2nd International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2010)
59.	Y. Yin, and S. Hosaka “Multi-level storage in phase-change memory: from multi-layer to single layer” The 22nd Symposium on Phase Change Optical Information Storage (PCOS2010), Atami, Japan (Nov. 2010)
58.	M. Huda, T. Akahane, T. Tamura, Y. Yin, and S. Hosaka “Fabrication of 10-nm Block Copolymer Self-Assembled Nanodots for Ultrahigh-Density Magnetic Recording” 23rd International Microprocesses and Nanotechnology Conference, Fukuoka, Japan (Nov. 2010).
57.	T. Akahane, M. Huda, T. Tamura, Y. Yin, and S. Hosaka “Orientation-Controlled and Long-Range-Ordering Self-Assembled Nanodot Array for Ultrahigh-Density Bit Patterned Media” 23rd International Microprocesses and Nanotechnology Conference, Fukuoka, Japan (Nov. 2010).
56.	Y. Yin, and S. Hosaka “Multilevel storage in lateral phase-change memory by promotion of nanocrystallization” The 36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy (Sep. 2010)
55.	S. Hosaka, T. Akahane, M. Huda, T. Tamura, and Y. Yin “Long-range-ordering of nanodot arrays using self-assembled block copolymers with EB drawn guide post and line mixing templates” The 36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy (Sep. 2010)
54.	S. Hosaka, T. Noguchi, and Y. Yin “Multi-levels phase change memory using pulse modulation” EPCOS 2010, Milano, Italy (Sep. 2010), Proc. EPCOS 2010, pp. 105-110.
53.	M. Huda, T. Akahane, T. Tamura, Y. Yin, and S. Hosaka “Fabrication of 10-nm Block Copolymer Self-Assembled Nanodots for High-Density Magnetic Recording” the 18th Indonesian Scientific Meeting, Nagoya, Japan (Aug. 2010).
52.	S. Hosaka, D. Terauchi, T. Takizawa, Y. Yin, and H. Sone “Step-in mode NC-AFM for CD measurement of fine structure in air” The 13th International Conference on Non-Contact Atomic Force Microscopy, Kanazawa, Japan (Aug. 2010)
51.	Y. Yin, T. Noguchi, H. Ohno,and S. Hosaka “Ultramultiple-multi-level storage in SbTeN-based phase-change memory” The 7h International Forum on Advanced Material Science and Technology, Dalian, China (Jun. 2010)
50.	S. Hosaka, H. Koyabu, Y. Aramomi, H. Sone, Y. Yin, E. Sato, and K. Tochigi “Measurement of Local Stress Distribution in Fine Silicon Gate Using Illumination-Collection Mode Scanning Near-Field Optical Microscopy and Raman Spectroscopy” The 7h International Forum on Advanced Material Science and Technology, Dalian, China (Jun. 2010)
49.	T. Akahane, M. Huda, Y. Yin, and S. Hosaka “Guide Pattern for Long-Range-Order Nanofabrication of Self-Assembled Block Copolymers” 1st International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2009)
48.	Y. Yin, T. Noguchi, H. Ohno, and S. Hosaka “Large Resistance Ratio for High Reliability of Multi-Level Storage in Phase-Change Memory” 1st International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2009)
47.	M. Huda, Y. Yin, and S. Hosaka “Self-Assembled Nanodot Fabrication by Using Diblock Copolymer” 1st International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2009)
46.	T. Tamura, Y. Tanaka, T. Akahane, Y. Yin, and S. Hosaka “Fabrication of Si Dot Arrays by EB Lithography and Dry Etching for Quantum Dot Solar Cells” 1st International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2009)
45.	S. Hosaka, H. Koyabu, Y. Aramomi, H. Sone, Y. Yin, E. Sato, and K. Tochigi “Prototype of illumination-collection mode scanning near-field optical microscopy and Raman spectroscopy with aperture-less pyramidal probe” 1st International Conference on Advanced Micro-Device Engineering (AMDE), Gunma, Japan (Dec. 2009)
44.	Y. Yin, T. Noguchi, H. Ohno, and S. Hosaka “Material engineering in phase-change memory for low power consumption and multi-level storage” the 5th Interna-tional Conference on Electron Devices and Solid State Circuits, Xian, China (Nov. 2009).
43.	S. Hosaka, Y. Tanaka, M. Shirai, Z. Mohamad, Y. Yin, Y. Kondo, and J. Ariake “Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling” the 5th Interna-tional Conference on Electron Devices and Solid State Circuits, Xian, China (Nov. 2009).
42.	S. Hosaka, Y. Tanaka, Z. Mohamad, M. Shirai, H. Sano, H. Sone, and Y. Yin “Nano-dot and pit arrays with a pitch of 25 nm x 25 nm fabricated by EB drawing, RIE and nano-imprinting toward 1 Tb/ in2 storage” 2nd international symposium on MONODZUKURI, Gunma, Japan (Oct. 2009).
41.	Y. Yin, T. Noguchi, H. Ohno, and S. Hosaka “Research on low power consumption and multi-level storage in phase-change memory” 2nd international symposium on MONODZUKURI, Gunma, Japan (Oct. 2009).
40.	T. Noguchi, H. Ohno, Y. Yin, and S. Hosaka “Low power lateral phase-change memory” 2nd international symposium on MONODZUKURI, Gunma, Japan (Oct. 2009).
39.	Y. Tanaka, N. Mitomi, S. Hosaka, and Y. Yin “Fine dot pattern formation on magnetic film for high density magnetic storage” 2nd international symposium on MONODZUKURI, Gunma, Japan (Oct. 2009).
38.	Y. Aramomi, S. Kobuna, Y. Yin, H. Sone, and S. Hosaka, “Scanning Near-field Raman spectroscopy (SNRS) to detect the stress distribution for high spatial resolution” 2nd international symposium on MONODZUKURI, Gunma, Japan (Oct. 2009).
37.	T. Tamura, Y. Tanaka, T. Akahane, Y. Yin, and S. Hosaka “Fabrication of dot arrays by EB lithography for quantum dot solar cell” 2nd international symposium on MONODZUKURI, Gunma, Japan (Oct. 2009).
36.	Y. Yin, T. Noguchi, H. Ohno, K. Ota, and S. Hosaka “Multi-Level Storage in Lateral Phase-Change Memory” the International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), Beijing, China, 3O-2015, p. 56. (Sep. 2009).
35.	S. Hosaka, Y. Tanaka, M. Shirai, Z. Mohamad, Y. Yin, Y. Kondo, and J. Ariake “Nano magnetic column arrays fabrication for patterned media in magnetic recording using EB lithography and ion milling” the International Conference on Nanoscience and Technology, China 2009 (ChinaNANO 2009), Beijing, China, 5O-2061, p. 118. (Sep. 2009).
34.	Y. Yin, T. Noguchi, H. Ohno, and S. Hosaka <Invited>“Research on low power consumption and multi-level storage in phase-change memory” the 2nd NSC-JST Nano Device Workshop, Hsinchu, Taiwan, pp.56-58 (July 2009).
33.	S. Hosaka, H. Sano, Y. Tanaka, M. Shirai, Z. Mohamad, Y. Tanaka, H. Sone, Y. Yin <Invited>“Nanomagnetic dot arrays fabrication based on electron beam drawing and its size effect” Nanomeeting-2009, Minsk, Belarus (May 2009).
32.	Y. Aramomi, H. Koyabu, H. Sone, Y. Yin, S. Hosaka, E. Sato, and K. Tochigi “Near-field Raman spectroscopy using illumination-collection mode with typical AFM pyramidal probe” 2nd International Workshop on Nanotechnology, Kusatsu, Japan (Mar. 2009).
31.	Y. Tanaka, N. Mitomi, S. Hosaka, H. Sone, and Y. Yin “Challenge to form 25 × 25 nm2 pitch dot on magnetic thin film on glass substrate for 1Tb/in2 magnetic storage” 2nd International Workshop on Nanotechnology, Kusatsu, Japan (Mar. 2009).
30.	T. Noguchi, Y. Yin, N. Higano, K. Ota, and S. Hosaka “Lateral type phase-change memory with top heater for low-power consumption” 2nd International Workshop on Nanotechnology, Kusatsu, Japan. (Mar. 2009)
29.	Y. Yin, T. Noguchi, H. Ohno, K. Ota, and S. Hosaka “Multiple-Level Storage in N-doped-SbTe Phase-Change Memory with an Additional Top TiN Layer” 2nd International Workshop on Nanotechnology, Kusatsu, Japan (Mar. 2009).
28.	S. Hosaka, Y. Tanaka, Y. Aramomi, H. Sone, and Y. Yin “Research activities on nanotechnology in Hosaka Lab” 2nd International Workshop on Nanotechnology, Kusatsu, Japan (Mar. 2009).
27.	S. Hosaka, K. Ohta, T. Noguchi, H. Sone and Y. Yin “Small consumption power and multi-level storage in lateral type phase-change memory with a top heater” PCOS 2008, Izu, Shizuoka, Japan pp. 48-52 (Dec. 2008).
26.	S. Hosaka, M. Shirai, Z. bin Mohamad, H. Sone, and Y. Yin “Fabrication of fine magnetic column arrays by 30 keV EB lithography and ion-milling” 34th International Conference on Micro- and Nano-Engineering 2008, Athens, Greece (Sep. 2008).
25.	S. Hosaka, T. Noguchi, N. Higano, K. Ota, H. Sone, and Y. Yin “Low power writing in lateral type phase-change memory” 2008 European/Phase Change and Ovonics Symposium, Prague, the Czech Republic, 2008, pp. 170 (Sep. 2008).
24.	Y. Yin, K. Ota, T. Noguchi, H. Sone, and S. Hosaka “Multi-level-storage in lateral SbTeN-based phase-change memory with an additional top TiN layer” Extended Abstracts of the International Conference on Solid State Devices and Materials, Tsukuba, Ibaraki, Japan, 2008, pp. 1152-1153. (Sep. 2008).
23.	Y. Yin, N. Higano, T. Noguchi, K. Ota, H. Sone, and S. Hosaka “Reactively sputtered Ti-Si-N films for application to heating layer in low-current phase-change memory” MRS International Materials Research Conference 2008, Chongqing, China, D8.3 (Jun. 2008).
22.	S. Hosaka, M. Shirai, Z. Mohamad, H. Sone, and Y. Yin “20 nm x 20 nm pitch fine dot arrays formed by 30 keV EB lithography and ion-milling” MRS International Materials Research Conference 2008, Chongqing, China, D8.70 (Jun. 2008).
21.	Y. Yin, N. Higano, T. Noguchi, K. Ota, H. Sone, and S. Hosaka “Ultramultiple-level storage in N-doped-Sb2Te3 phase-change memory with an additional top TiN layer” The International MRS 2008 Conference Beijing AAA Satellite Meeting on Advanced Technologies for Advanced Characterizations of Advanced Materials, Beijing, China, 2008, pp. 27 (Jun. 2008).
20.	S. Hosaka, M. Shirai, Z. Mohamad, Y. Tanaka, H. Sone, and Y. Yin “Formation of 20 nm x 20 nm fine pitch dot arrays by 30 keV EB lithography” The International MRS 2008 Conference Beijing AAA Satellite Meeting on Advanced Technologies for Advanced Characterizations of Advanced Materials, Beijing, China, 2008, pp. 11 (Jun. 2008).
19.	S. Hosaka, N. Higano, K. Ohta, A. Miyachi, H. Sone, and Y. Yin <Invited>“Prospective of phase-change memory” 2008 MRS Spring Meeting, San Francisco, California, USA. (Mar. 2008)
18.	Y. Yin, N. Higano, K. Ohta, A. Miyachi, M. Asai, H. Sone, and S. Hosaka “Prototypical lateral multi-state phase-change memory with a multi-layer media” 2007 IEEE International Conference on Electron Devices and Solid-State Circuits, Taiwan, China, 2007, pp.149-152 (Dec. 2007).
17.	S. Hosaka, Z. bin Mohamad, M. Shirai, H. Sano, Y. Yin, A. Miyachi, and H. Sone “Nano-dot and pit arrays with a pitch of 25 nm x 25nm fabricated by EB drawing, RIE and nano-imprinting toward 1 Tb/in2 storage” 33rd International Conference on Micro- and Nano-Engineering 2007, Copenhagen, Denmark, pp. 129-130 (Sep. 2007).
16.	M. Asai, A. Miyachi, Y. Yin, H. Sone, and S. Hosaka “Nanometer scale studies of phase-change material using NC-AFM, XRD, and TEM” The 2nd Gunma International Symposium on Chemistry, Kiryu, Japan, pp. 22 (Jul. 2007).
15.	K. Ota, Y. Yin, N. Higano, A. Miyachi, H. Sone, and S. Hosaka “Local heating of phase change material in PCMD” The 2nd Gunma International Symposium on Chemistry, Kiryu, Japan, pp. 62 (Jul. 2007).
14.	M. Asai, A. Miyachi, Y. Yin, H. Sone, and S. Hosaka “Nanometer scale studies of phase-change material using NC-AFM, XRD, and TEM” 1st Surface and Nano Science Workshop, Taipei, Taiwan, (Jun. 2007).
13.	K. Ota, Y. Yin, N. Higano, A. Miyachi, H. Sone, and S. Hosaka “Direct and indirect heating of low power lateral type PCMD” 1st Surface and Nano Science Workshop, Taipei, Taiwan, (Jun. 2007).
12.	S. Hosaka, Z. bin Mohamad, H. Sano, M. Shirai, Y. Yin, and H. Sone “Nano-dot arrays with a pitch of 25 nm x 25nm written by EB writer for over 1 Tb/in2 storage” 1st Surface and Nano Science Workshop, Taipei, Taiwan, (Jun. 2007).
11.	Y. Yin, D. Niida, K. Ohta, A. Miyachi, M. Asai, N. Higano, H. Sone, and S. Hosaka “In situ SEM observation of grain formation and growth induced by electrical pulses in lateral Ge2Sb2Te5 phase-change memory” 2007 MRS Spring Meeting, San Francisco, California, USA, 0997-I12-05 (Mar. 2007).
10.	Y. Yin, N. Higano, K. Ohta, A. Miyachi, M. Asai, D. Niida, H. Sone, and S. Hosaka “Characteristics of N-doped Sb2Te3 films by X-ray diffraction and resistance measurement for phase-change memory” 2007 MRS Spring Meeting, San Francisco, California, USA, 0997-I10-11 (Mar. 2007).
9.	M. Asai, A. Miyachi, Y. Yin, H. Sone, and S. Hosaka “UHV NC-AFM observation of surface structure and grain size changes of Ge2Sb2Te5 films by annealing effect” The 14th International Colloquium on Scanning Probe Microscopy, Atagawa, Japan, pp. 62 (Dec. 2006).
8.	Y. Yin, K. Ohta, H. Sone, and S. Hosaka “A novel multi-channel phase-change memory cell for multi-state storage with high controllability” 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, Shanghai, China, pp. 778-780 (Oct. 2006).
7.	Y. Yin, D. Niida, N. Higano, A. Miyachi, H. Sone, and S. Hosaka, “Ultra low operation current lateral phase-change memory”, Extended Abstracts of the International Conference on Solid State Devices and Materials, Yokohama, Japan, pp. 562-563 (Sep. 2006).
6.	A. Miyachi, Y. Yin, M. Asai, H. Sone, and S. Hosaka “Observation of chalcogenide material surface for phase change memory (PRAM) using NC-AFM” 2006 Nc-AFM International Conference, Kobe, Japan, 2006, pp. 96 (Aug. 2006).
5.	Y. Yin, A. Miyachi, D. Niida, H. Sone, and S. Hosaka “Thickness dependences of phase change and channel current control in phase-change channel transistor” 2005 IEEE International Conference on Electron Devices and Solid-State Circuits, Hongkong, China, pp. 617-620 (Dec. 2005).
4.	Y. Yin, D. Niida, H. Sone, and S. Hosaka “Annealing effect of phase change and current control in phase change channel transistor memory” 2005 Intern. Conf. Solid State Devices and Materials (SSDM 2005), Kobe, Japan, pp. 644-645 (Sep. 2005).
3.	Y. Yin, H. Sone, and S. Hosaka “Electric properties of thin GeSbTe and AgInSbTe films by annealing” Proceedings of the 16th Symposium Phase Change Optical Information Storage PCOS 2004, Osaka, Japan, pp. 23-26 (Oct. 2004).
2.	S. Hosaka, K. Miyauchi, T. Tamura, Y. Yin, and H. Sone “Proposal of memory transistor using a phase change and nano-size effects for high density memory array” Proceedings of 15th Symposium on Phase Change Optical Information Storage (Ed. M. Okuda), Atami, Japan, pp. 52-55 (Oct. 2003).
1.	Y. Yin, J.F. Jiang, and Q.Y. Cai “Single electron memory effect in TiOx nano-structure” 2001 6th international conference on Solid-state and integrated circuit technology proceedings, Shanghai, China, pp. 1415-1417 (Oct. 2001).

45.	石井　翔、栁澤　圭亮、赤羽　隆志、尹友 “光レクテナのためのスピンコート法を用いたMIMダイオードの作製” 2025年第72回応用物理学会春季学術講演会（東京理科大学野田キャンパス）、2025年3月.
44.	美内　睦美、松田和希、吉本　匠汰、澤井　英志、尹友 “OドープGeTe/Sb₂Te₃多層膜相変化材料の開発” 2025年第72回応用物理学会春季学術講演会（東京理科大学野田キャンパス）、2025年3月.
43.	吉本匠汰、矢矧俊祐、美内睦美、尹友 “相変化デバイス高性能化のためのNドープによるSb₃Te相変化材料の熱安定性向上” 2025年第72回応用物理学会春季学術講演会（東京理科大学野田キャンパス）、2025年3月.
42.	美内　睦美、松田和希、澤井　英志、吉本　匠汰、尹　友 “OドープGeTe/Sb₂Te₃多層膜の特性評価とそのデバイスへの応用” The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(神奈川工科大学）、 2024年11月23日.（ポスター発表　発表日：11/23（土））
41.	吉本　匠汰、矢矧　俊祐、美内　睦美、尹　友 “人工シナプスの高性能化のためのNドープによるSb₃Te相変化材料の熱安定性の向上” The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(神奈川工科大学）、 2024年11月23日.（ポスター発表　発表日：11/23（土））
40.	澤井　英志、美内　睦美、尹　友 “第一原理計算による空孔導入Sb₂Te₃/GeTe超格子材料の検討” The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(神奈川工科大学）、 2024年11月23日.（ポスター発表　発表日：11/23（土））
39.	廣田　優希、桑原憂也、初谷真隆、尹　友 “PS-PDMSブロックコポリマーの自己組織化法によるナノ構造形成と評価” The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(神奈川工科大学）、 2024年11月23日.（ポスター発表　発表日：11/23（土））
38.	宮田大暉、原川来比登、尹　友 “高性能化を目指したHfOx薄膜評価とHfO₂を用いたReRAMの開発” The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(神奈川工科大学）、 2024年11月23日.（ポスター発表　発表日：11/23（土））
37.	宮田大暉、原川来比登、尹　友 “反応性スパッタリングによるZrOx薄膜作製とそのReRAMへの応用” The 21st IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(神奈川工科大学）、 2024年11月23日.（ポスター発表　発表日：11/23（土））
36.	吉本匠汰、尹友 “人工シナプス素子の高性能化に向けたNドープSb₃Te相変化材料の開発” 2024年第71回応用物理学会春季学術講演会（東京都市大学　世田谷キャンパス）、2024年3月.　（口頭発表　発表日：3/25（月））
35.	桑原　憂也、廣田　優希、尹　友 “PS-PDMSブロックコポリマーを用いたナノ構造の形成と評価” The 20th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(神奈川工科大学）、 2023年10月22日.（ポスター発表　発表日：10/22（日））
34.	石井　翔、赤羽　隆志、尹　友 “光レクテナのためのMIMダイオードの作製と評価” The 20th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(神奈川工科大学）、 2023年10月22日.（ポスター発表　発表日：10/22（日））
33.	矢矧　俊祐、吉本　匠汰、宮田　大暉、美内　睦美、尹　友 “高信頼性に向けた酸素添加GeTe相変化薄膜の作製と評価” The 20th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(神奈川工科大学）、 2023年10月22日.（ポスター発表　発表日：10/22（日））
32.	美内　睦美、白川　遼馬、澤井　英志、矢矧　俊祐、尹　友 “第一原理計算による酸素添加GeTe/Sb₂Te₃超格子人工シナプス機能材料の研究” The 20th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(神奈川工科大学）、 2023年10月22日.（ポスター発表　発表日：10/22（日））
31.	藤原貴生、尹　友 “熱安定性改善のためのZn₅Sb₃Te₁にNとTiをコドープした新規相変化材料の開発” The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(東京農工大学）、 2022年11月26日.（ポスター発表　発表日：11/26（土））
30.	赤羽隆志、石井翔、尹　友 “太陽光発電素子のためのナノ加工技術に関する研究” The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(東京農工大学）、 2022年11月26日.（ポスター発表　発表日：11/26（土））
29.	新山浩司、尹友 “人工シナプス素子の高性能化に向けたN-OコドープSb₂Te₃相変化材料の開発” 2022年春季第69回応用物理学会学術講演会（青山学院大学　相模原キャンパス　＆　オンライン）、2022年3月.　（口頭発表　発表日：3/24（木））
28.	松橋航、尹　友 “Sb₂Te₃へのC-Nコドーピングによる相変化デバイス書き込み電流の削減” The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(Online）、 2021年11月13日.（口頭発表　発表日：11/13（土））
27.	茂木勇成、尹　友 “TiOxナノ粒子を用いたフレキシブル抵抗センサの試作と機能実証” The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(Online）、 2021年11月13日.（口頭発表　発表日：11/13（土））
26.	新山浩司、尹　友 “シナプス素子の高性能化に向けたN-OコドープSb₂Te₃新相変化材料の開発” The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(Online）、 2021年11月13日.（口頭発表　発表日：11/13（土））
25.	白川　遼馬、尹　友 “局所的電流密度増強による相変化素子の低動作電流化” The 18th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(Online）、 2021年11月13日.（口頭発表　発表日：11/13（土））
24.	白川　遼馬、尹友 “ナノ構造を有する相変化素子の低動作電流化のための有限要素法解析” 2021年秋季第82回応用物理学会学術講演会（名城大学　天白キャンパス　＆　オンライン）、2021年9月.　（口頭発表　発表日：9/12（日））
23.	栁澤圭亮、赤羽隆志、尹　友 “MIMダイオード構造を備えた光レクテナの設計と電磁界シミュレーション” The 17th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(Online）、 2020年11月.
22.	尹　友 “情報記録素子の高性能化のための相変化材料の開発” 技術開発と人材育成に関する交流会、2020年1月.
21.	澤尾　景太、西條　大、金山　徳志、曾根　逸人、尹　友 “N-Sb2Te3を用いたシナプス素子に関する研究” The 14th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(東京理科大学）、2017年11月.
20.	西條　大、澤尾　景太、曾根　逸人、尹　友 “有限要素法による低動作電流相変化メモリの検討” The 14th IEEE Transdisciplinary-Oriented Workshop for Emerging Researchers　(IEEE TOWERS）(東京理科大学）、2017年11月.
19.	保坂純男，尹友，張　慧 [招待講演]“相変化記録の多値化と高速化へのアプローチおよび微細性” MR ITE-MMS（東京工業大学）, 2017年7月.
18.	高橋　良輔、金　涛、ブレミン　ニャット、曾根　逸人、尹　友、保坂　純男 “近接場偏光顕微鏡を用いた磁気ドットの高分解能磁化計測” 2014年第61回応用物理学会秋季学術講演会（北海道大学）.
17.	尹友、保坂純男 “電子線描画法及び自己組織化法を用いたナノドット形成と整列” 第7回PBW（Proton Beam Writing）研究会（日本原子力研究開発機構高崎量子応用研究所）, 2014年3月.
16.	保坂純男、尹友 [チュートリアル招待講演]“相変化メモリの原理と将来性” 磁気記録・情報ストレージ研究会（MR）（茨城大学日立キャンパス）, 2012年7月.
15.	小森琢哉、張慧、赤羽隆志、モハマドズルファクリ、尹友、保坂純男 “30-KeV電子線描画法を用いた3 Tbit/in.2（ピッチ15 nm）超高密度磁気記録用ドット列の形成” 2011年秋季第72回応用物理学会学術講演会（山形大学）.
14.	ミフタフルフダ、赤羽隆志、田村拓郎、尹友、保坂純男、木原直子、鎌田芳幸、喜々津哲 “高密度磁気記録のためのブロック共重合体による自己組織化10nmナノドット形成” 2010年秋季第71回応用物理学会学術講演会（長崎大学）.
13.	赤羽隆志、ミフタフルフダ、田村拓郎、尹友、保坂純男 “高密度パターンドメディアのための電子線描画ポスト格子とガイドラインによる自己組織化パターンの規則配列制御” 2010年秋季第71回応用物理学会学術講演会（長崎大学）.
12.	尹友、太田和宏、野口智之、曾根逸人、保坂純男 “上部ヒータ付ラテラル型相変化メモリの多値記録” 2008年秋季第69回応用物理学会学術講演会 (中部大学).
11.	野口智之、尹友、太田和宏、曾根逸人、保坂純男 “低消費電力化のための上部ヒーター付ラテラル相変化素子” 2008年秋季第69回応用物理学会学術講演会 (中部大学).
10.	渋谷隆広、大西茂夫、太田和宏、尹友、保坂純男 “ＲＲＡＭスイッチング動作に及ぼすジュール加熱の影響” 2008年春季第55回応用物理学関係連合講演会（日大）.
9.	尹友、日向野直也、太田和宏、宮地晃平、曾根逸人、保坂純男 “ラテラル型窒素ドープSbTeによる多値記録マルチレイヤー相変化メモリ” 2007年秋季, 第68回応用物理学会学術講演会（北海道工業大学）.
8.	日向野直也、尹友、宮地晃平、仁井田大輔、太田和宏、曾根逸人、保坂純男 “ヒーター層付きラテラル型相変化メモリ素子の繰り返し相変化実験” 2007年春季, 第54回応用物理学関係連合講演会（青山学院大学）.
7.	太田和宏、尹友、宮地晃平、曾根逸人、保坂純男 “ヒーター層付きラテラル型相変化メモリのジュール加熱シミュレーション” 2007年春季, 第54回応用物理学関係連合講演会（青山学院大学）.
6.	保坂純男、Yin You、仁井田大輔、宮地晃平、曽根逸人 “GSTの結晶構造および表面形状とラテラル型相変化素子の相変化制御性” シリコン材料・デバイス研究会「新型不揮発性メモリー」，機械振興会館 (2006).
5.	宮地晃平、尹友、淺井政宏、仁井田大輔、日向野直也、太田和宏、曾根逸人、保坂純男 “超高真空ノンコンタクト原子間力顕微鏡によるGeSbTe薄膜の相変化に伴う表面構造の観察” 第三回21世紀COEシンポジウム、大阪大学、2006.
4.	仁井田大輔、宮地晃平、尹友、曾根逸人、保坂純男 “ラテラル型相変化抵抗素子における相変化繰り返し実験” 2006年春季第53回応用物理学関係連合講演会（武蔵工大）.
3.	宮地晃平、尹友、仁井田大輔、曾根逸人、保坂純男 “UHV-AFMを用いた加熱前/後におけるGe2Sb2Te5薄膜の表面構造の観察” 2005年秋季第66回応用物理学会学術講演会（徳島大）.
2.	保坂純男、曾根逸人、尹友 “相変化チャンネルを用いたメモリトランジスタの可能性” シリコン材料・デバイス研究会「新型不揮発性メモリー」，機械振興会館 (2004).
1.	保坂純男、宮内邦裕、曾根逸人、You Yin “相変化メモリトランジスタと結晶成長” 日本結晶成長学会第34回結晶成長国内会議，東京農工大学 (2004年7月) 日本結晶成長学会誌,31(3) pp.123 ( 2004).

6.	保坂純男，曾根逸人，尹友 “近接場偏光顕微鏡” 特願2014-165037（2014年8月13日）
5.	酒井武信，保坂純男，尹友，田村拓郎 “光電変換素子及びその製造方法” 特願2011-184581（2011年8月26日）
4.	保坂純男，曾根逸人，尹友，岡野晴樹 “加速度センサ” 特開2011-237390、特願2010-111424（2010年5月13日）
3.	尹友，保坂純男, 曾根逸人 “メモリ装置、電子機器、相変化メモリ素子への記録方法” 特開2009-266316、特願2008-115775（2008年4月25日）
2.	尹友，保坂純男, 曾根逸人 “メモリ素子、メモリセル、メモリセルアレイ及び電子機器” 特開2009-123847、特願2007-294887（2007年11月13日）
1.	保坂純男, 曾根逸人, 尹友 “メモリ素子、メモリセル、及びメモリセルアレイ” 特許第5201616号、特開2008-294207、特願2007-137813（2007年5月24日）